用于光传输系统的110 ghz以上InP HEMT倒装芯片分布式基带放大器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 1900-01-01 DOI:10.1109/gaas.2002.1049038

S. Masuda, T. Hirose, T. Takahashi, M. Nishi, S. Yokokawa, S. Iijima, K. Ono, N. Hara, K. Joshin

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引用次数: 43

摘要

我们利用反向微带线技术成功地开发了最先进的InP HEMT分布式放大器。对于其中一个，我们实现了14.5 dB的增益和94 GHz的3db带宽，从而获得500 GHz的增益带宽乘积;对于另一个，我们实现了7.5 dB的增益和超过110 GHz的3db带宽。该技术还证明了制造具有倒装芯片组装的超宽带封装ic的能力，可运行到w波段。据我们所知，这些结果代表了迄今为止报道的分布式放大器的最高增益带宽乘积和最宽带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems

We successfully developed state of the art InP HEMT distributed amplifiers by using inverted microstrip line technology. For one, we achieved a gain of 14.5 dB and a 94-GHz 3-dB bandwidth resulting in a gain-bandwidth product of 500 GHz, and for the other we achieved a gain of 7.5 dB and a 3-dB bandwidth of over 110 GHz. This technology also demonstrates the capability of fabricating ultra-broadband packaged ICs with flip-chip assembly for operation up to the W-band. To our knowledge, these results represent the highest gain bandwidth product and the widest bandwidth for distributed amplifiers reported to date.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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