氮化镓(GaN) HEMT的进展和商业应用潜力

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049069

J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer, M. Isenhour

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引用次数: 42

摘要

本文重点介绍了RF Micro Devices公司100mm氮化镓HEMT技术的发展，以及GaN晶体管在功率放大器、功率开关和低噪声功率振荡器等商业应用中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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