III-V型HBTs泄漏电流的三维分析

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049066

V. Palankovski, R. Klima, R. Schultheis, S. Selberherr

{"title":"III-V型HBTs泄漏电流的三维分析","authors":"V. Palankovski, R. Klima, R. Schultheis, S. Selberherr","doi":"10.1109/GAAS.2002.1049066","DOIUrl":null,"url":null,"abstract":"We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"172 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Three-dimensional analysis of leakage currents in III-V HBTs\",\"authors\":\"V. Palankovski, R. Klima, R. Schultheis, S. Selberherr\",\"doi\":\"10.1109/GAAS.2002.1049066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"172 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们给出了应用于mmic的真实HBT结构的全三维模拟结果。为了解释器件在整个电压范围内的行为，进行了泄漏调查。本文给出了三维仿真需要的理由，并解决了关键的开发、建模和仿真问题。

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Three-dimensional analysis of leakage currents in III-V HBTs

We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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