用于长距离光纤通信的40 Gbit/s高性能GaAs pHEMT高压调制器驱动器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049052

W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre

{"title":"用于长距离光纤通信的40 Gbit/s高性能GaAs pHEMT高压调制器驱动器","authors":"W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre","doi":"10.1109/GAAS.2002.1049052","DOIUrl":null,"url":null,"abstract":"In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications\",\"authors\":\"W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre\",\"doi\":\"10.1109/GAAS.2002.1049052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

本文介绍了高增益高压40gb /s调制器驱动ic的研制。采用0.15 /spl mu/m GaAs pHEMT工艺，设计了双分布式放大器拓扑。调制器驱动器在3 dB带宽的50 GHz范围内具有26 dB的小信号增益，并在50 /spl ω /负载下提供超过7.5 Vpp的输出摆幅来驱动LiNbO/sub 3/调制器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications

In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

自引率

0.00%

发文量