一种采用InP DHBT技术的12gs /s跟踪保持放大器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049078

J. Lee, A. Leven, Y. Baeyens, C. Chen, Y. Yang, W. Sung, C. Liu, J. Frackvoiak, L. Chua, R. Kopf, Y. Chen

{"title":"一种采用InP DHBT技术的12gs /s跟踪保持放大器","authors":"J. Lee, A. Leven, Y. Baeyens, C. Chen, Y. Yang, W. Sung, C. Liu, J. Frackvoiak, L. Chua, R. Kopf, Y. Chen","doi":"10.1109/GAAS.2002.1049078","DOIUrl":null,"url":null,"abstract":"A 12 GS/s track-and-hold amplifier (THA) for a DSP-based electrical polarization-mode dispersion compensator (e-PMDC) in a 10 GHz optical receiver, featuring a total harmonic distortion (THD) compatible with 6 bit operation on 1 V/sub p-p/ differential input range at -5.2 V supply, has been designed and fabricated in InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) technology. This THA shows a THD of better than -23 dB for 12 GHz 1 V/sub p-p/ input, corresponding 4 bit resolution, under a differential clock of 12 GHz.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 12-GS/s track-and-hold amplifier in InP DHBT technology\",\"authors\":\"J. Lee, A. Leven, Y. Baeyens, C. Chen, Y. Yang, W. Sung, C. Liu, J. Frackvoiak, L. Chua, R. Kopf, Y. Chen\",\"doi\":\"10.1109/GAAS.2002.1049078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 12 GS/s track-and-hold amplifier (THA) for a DSP-based electrical polarization-mode dispersion compensator (e-PMDC) in a 10 GHz optical receiver, featuring a total harmonic distortion (THD) compatible with 6 bit operation on 1 V/sub p-p/ differential input range at -5.2 V supply, has been designed and fabricated in InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) technology. This THA shows a THD of better than -23 dB for 12 GHz 1 V/sub p-p/ input, corresponding 4 bit resolution, under a differential clock of 12 GHz.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用InP/InGaAs/InP双异质结双极晶体管(DHBT)技术，设计和制造了一种12 GS/s的跟踪保持放大器(THA)，用于10ghz光接收机中基于dsp的电极化模式色散补偿器(e-PMDC)，该放大器具有总谐波失真(THD)，兼容6位工作，电源为-5.2 V，输入范围为1v /sub - p-p/差分。该THA显示在12ghz差分时钟下，在1v /sub -p/输入下，相应的4位分辨率下，THD优于- 23db。

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A 12-GS/s track-and-hold amplifier in InP DHBT technology

A 12 GS/s track-and-hold amplifier (THA) for a DSP-based electrical polarization-mode dispersion compensator (e-PMDC) in a 10 GHz optical receiver, featuring a total harmonic distortion (THD) compatible with 6 bit operation on 1 V/sub p-p/ differential input range at -5.2 V supply, has been designed and fabricated in InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) technology. This THA shows a THD of better than -23 dB for 12 GHz 1 V/sub p-p/ input, corresponding 4 bit resolution, under a differential clock of 12 GHz.

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来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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