一种4瓦x波段紧凑型共面高功率放大器MMIC，增益为18db, PAE为25%

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049057

A. Bessemoulin, M.R. Quay, S. Ramberger, M. Schlechtweg

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引用次数: 22

摘要

介绍了一种在x波段具有高输出功率的小型共面微波单片集成电路放大器的性能。基于我们在4英寸晶圆上的0.3-/spl mu/m栅极长度GaAs功率PHEMT工艺，这款两级放大器的芯片尺寸为16 mm/sup /，在x波段平均CW为4瓦，PAE为25%，线性增益超过18 db。在10 GHz时，P/sub -1dB/ = 36.3 dBm(4.3瓦)和P/sub / 36.9 dBm(4.9瓦)的峰值输出功率，功率附加效率为35%。与之前报道的x波段共面HPA相比，这意味着芯片尺寸减少了20%，与最先进的微带pa尺寸相当。

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A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/ = 36.3 dBm (4.3 Watts) and P/sub sat/ of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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