1.1 W/mm大功率GaAs/InGaP复合沟道场效应管，工作电压为26 V，具有非对称LDD结构

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049049

K. Nakata, R. Masuyama, S. Nakajima

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引用次数: 1

摘要

为了提高InGaP场效应管的电子输运性能，提出了一种GaAs/InGaP复合通道。采用LDD(轻掺杂漏极)结构，优化栅极漏极间距，改善了FET的击穿特性，实现了高电压工作。利用这种新型场效应管，我们可以在26 V等高压工作下实现1.1 W/mm的高输出功率密度。与传统的GaAs MESFET相比，该FET具有更好的畸变特性。三阶调制间失真(IM3)提高了7 dB。

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1.1 W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26 V operation

A GaAs/InGaP composite channel is proposed in order to improve the electron transport properties of an InGaP FET. Adopting an LDD (Lightly Doped Drain) structure and optimizing gate to drain spacing improved the breakdown characteristic and enabled high voltage operation of the FET. With this novel FET, we could achieve a high output power density of 1.1 W/mm at high voltage operation such as 26 V. The FET showed better distortion characteristics than the conventional GaAs MESFET. Third order inter modulation distortion (IM3) was improved by 7 dB.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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