1瓦宽ka波段超小型高功率放大器mmic使用0.25-/spl μ m GaAs PHEMTs

A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger
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引用次数: 18

摘要

我们报告了用于ka波段应用的超小型高功率放大器mmic的设计和性能。采用量产的4英寸0.25-/spl μ m GaAs PHEMT技术,结合适当的紧凑电路拓扑结构,这些功率放大器在26-36 GHz频率范围内实现了超过18 dB的线性增益,1 dB增益压缩时的输出功率为P/sub -1 dB/=29.5 dBm (900 mW),饱和输出功率超过1瓦(30.1 dBm),芯片尺寸仅为2.25 mm/sup 2/ (1.25/spl倍/1.8 mm/sup 2/)。据我们所知,这是任何GaAs PHEMT MMIC功率放大器在ka波段报道的最高输出功率和每个芯片面积的增益密度(即400-440 mW/mm/sup 2/和8 dB/mm/sup 2/)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs
We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.
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