A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger
{"title":"1瓦宽ka波段超小型高功率放大器mmic使用0.25-/spl μ m GaAs PHEMTs","authors":"A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger","doi":"10.1109/GAAS.2002.1049025","DOIUrl":null,"url":null,"abstract":"We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs\",\"authors\":\"A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger\",\"doi\":\"10.1109/GAAS.2002.1049025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs
We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.