氮化镓:用于高功率控制应用

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049045

R. Caverly, N. Drozdovski, C. Joye, M. Quinn

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引用次数: 3

摘要

讨论了氮化镓场效应晶体管在微波和射频控制中的应用。提出了一种场效应管的控制模型，用于预测导通电阻、关断电容和开关截止频率。还讨论了门偏置电路和高功率工作对导通电阻的影响。

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Gallium nitride: use in high power control applications

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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