采用InP/InGaAs异质结双极晶体管的40 GHz跨阻差分输出放大器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049030

Charles Wu, E. Sovero, Bruce Massey

{"title":"采用InP/InGaAs异质结双极晶体管的40 GHz跨阻差分输出放大器","authors":"Charles Wu, E. Sovero, Bruce Massey","doi":"10.1109/GAAS.2002.1049030","DOIUrl":null,"url":null,"abstract":"High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a stand-alone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer (DMUX) in short reach applications.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"236 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors\",\"authors\":\"Charles Wu, E. Sovero, Bruce Massey\",\"doi\":\"10.1109/GAAS.2002.1049030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a stand-alone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer (DMUX) in short reach applications.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"236 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 33

摘要

光纤接收模块需要高增益和带宽透阻放大器(TIA)。本文报道了基于Vitesse半导体公司(Vitesse磷化铟Release 1或VIP-1)开发的InP/InGaAs单异质结双极晶体管(SHBT)工艺，用于SONET/SDH STS-768/STM-256应用的40 Gbit/s TIA的设计、制造和表征。该放大器由一个单端输入跨阻前置放大器和一个差分输出后置放大器组成。测量的差分透阻为1800 /spl ω /， -3dB带宽大于40ghz。该电路的高增益消除了在短距离应用中传统的跨阻预放大器和解复用器(DMUX)之间的独立限制放大器的需要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors

High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a stand-alone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer (DMUX) in short reach applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

自引率

0.00%

发文量