具有92 GHz截止频率的高增益带宽产品InP HEMT分布式放大器，适用于40 Gbit/s及以上的应用

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049039

C. Meliani, G. Rondeau, G. Post, J. Decobert, W. Mouzannar, E. Dutisseuil, R. Lefevre

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引用次数: 9

摘要

介绍了一种共面分布式超宽带放大器的设计、制作及其特点。该电路采用Alcatel OPTO+开发的复合通道InP CC-HEMT高击穿电压技术制造。它在92 GHz -3dB截止频率上的平均增益为13 dB，对应于基带放大器ic的最先进的增益带宽产品410 GHz。它在110 GHz时仍然呈现8 dB增益。这种放大器是40和80 Gbit/s光电驱动模块应用的理想选择。我们讨论了在这种设计中使用共面波导线和低阻抗偏压微带传输线。我们还强调了40 Gbit/s眼图质量所需的最大带宽和80 Gbit/s ETDM通信所需的增益带宽乘积。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond

The design, fabrication and characteristics of a coplanar distributed ultra broadband amplifier are presented. The circuit is fabricated using a composite channel InP CC-HEMT high breakdown voltage technology developed in Alcatel OPTO+. It exhibits an average gain of 13 dB over a 92 GHz -3dB cut-off frequency that corresponds to a state of the art gain-bandwidth product of 410 GHz for baseband amplifier ICs. It still presents 8 dB gain at 110 GHz. Such an amplifier is a good candidate for 40 and 80 Gbit/s optoelectronic driver modules applications. We discuss the use of coplanar waveguide lines and low impedance bias microstrip transmission lines in such a design. We also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain-bandwidth product for 80 Gbit/s ETDM communications.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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