含InP hemt的16 GHz MMIC阻像混频器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049042

A. Orzati, F. Robin, H. Meier, W. Bachtold

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引用次数: 1

摘要

在本文中，我们提出了一种单片集成阻像混频器，该混频器使用16 GHz本振(LO)将1 - 2 GHz频段的信号移动到14 - 15 GHz频段。该电路采用共面波导技术，采用0.2 /spl mu/m InP HEMT内部工艺实现。该电路在2 dBm本振功率下的峰值转换增益为-7.3 dBm，本振抑制为20 dB，上带抑制大于17 dB。如果与InP HEMT电阻混频器的最佳报告结果相比，该性能非常出色。

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A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs

In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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