射频应力对AlGaN/GaN hemt色散和功率特性的影响

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049035

S. Hsu, P. Valizadeh, D. Pavlidis, J. Moon, M. Micovic, D. Wong, T. Hussain

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引用次数: 16

摘要

报道了射频应力对AlGaN/GaN hemt色散和功率特性的影响。射频应力后，漏极电流(饱和区/spl sim/ 67 mA/mm)降低，输出功率和功率增加效率相似。射频应力前后跨导色散较小，射频应力后输出电阻色散减小。在紫外光下进行的测试表明，观察到的结果可能归因于在AlGaN/GaN HEMT层中的捕获。

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Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs

The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are reported. Reduced drain current ( /spl sim/ 67 mA/mm in the saturation region) and similar output power and power-added efficiency were found after RF stress. Transconductance dispersion is small before and after RF stress while output resistance dispersion reduces after RF stress. Tests performed under UV light suggest that the observed results may be attributed to trapping in the AlGaN/GaN HEMT layers.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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