DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer

Abstract

DC characteristics of a depletion-mode (D-mode) GaAs MOSFET with a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer (74 /spl Aring/) show low gate leakage current, negligible drain current hysteresis and higher than 10 V gale-drain two-terminal breakdown voltage. Compared to MESFET with the same gate length, channel material and fabricated by the same process, the GaAs MOSFET shows higher unity current gain cutoff frequency (Ft). The higher Ft for the MOSFET than that of the MESFET agrees with earlier theoretical predictions.