An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals

J.H. Kim, Y. Noh, Y. Kim, S. Kim, C. Park
{"title":"An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals","authors":"J.H. Kim, Y. Noh, Y. Kim, S. Kim, C. Park","doi":"10.1109/GAAS.2002.1049055","DOIUrl":null,"url":null,"abstract":"We demonstrate a new MMIC smart power amplifier, which consists of dual chain power amplifiers with a single matching network, the power added efficiency (PAE) of which, for 16 dBm output power, is as much as 21%, which represents more than a factor of three improvement of the PAE while satisfying all W-CDMA specifications. The power amplifier has been devised with two different parallel connected InGaP/GaAs HBT power amplifiers, each amplifier fitted to different a maximum power value: one to 17.5 dBm for low power mode and the other to 28 dBm for high power mode. The low power mode reveals -33 dBc of adjacent channel leakage power ratio (ACLR) at 16 dBm with 14 mA of quiescent current. The high power mode exhibits 40% of PAE and -30 dBc of ACLR at the maximum output power of 28 dBm.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"89 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

We demonstrate a new MMIC smart power amplifier, which consists of dual chain power amplifiers with a single matching network, the power added efficiency (PAE) of which, for 16 dBm output power, is as much as 21%, which represents more than a factor of three improvement of the PAE while satisfying all W-CDMA specifications. The power amplifier has been devised with two different parallel connected InGaP/GaAs HBT power amplifiers, each amplifier fitted to different a maximum power value: one to 17.5 dBm for low power mode and the other to 28 dBm for high power mode. The low power mode reveals -33 dBc of adjacent channel leakage power ratio (ACLR) at 16 dBm with 14 mA of quiescent current. The high power mode exhibits 40% of PAE and -30 dBc of ACLR at the maximum output power of 28 dBm.
一种适用于W-CDMA移动通信终端的16 dBm功率下21% PAE的MMIC智能功率放大器
我们展示了一种新的MMIC智能功率放大器,它由双链功率放大器和单个匹配网络组成,其功率附加效率(PAE)在16 dBm输出功率下高达21%,在满足所有W-CDMA规范的情况下,PAE提高了三倍以上。功率放大器设计了两个不同的并联InGaP/GaAs HBT功率放大器,每个放大器安装不同的最大功率值:一个到17.5 dBm用于低功率模式,另一个到28 dBm用于高功率模式。低功耗模式显示,在16 dBm和14 mA静态电流下,相邻通道泄漏功率比(ACLR)为-33 dBc。在大功率模式下,最大输出功率为28 dBm时,PAE为40%,ACLR为-30 dBc。
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