采用薄Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)栅极介电层的耗尽型GaAs MOSFET的直流和射频特性

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049047

B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. Mannaerts, M. Sergent, M. Hong, K. Ng, J. Bude

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引用次数: 1

摘要

采用薄Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)栅极介电层(74 /spl Aring/)的耗尽型(D-mode) GaAs MOSFET的直流特性显示栅极漏电流低，漏极电流滞后可忽略不计，漏极双端击穿电压高于10 V。与栅极长度、沟道材料和工艺相同的MESFET相比，GaAs MOSFET具有更高的单位电流增益截止频率(Ft)。MOSFET的Ft比MESFET高，这与早期的理论预测一致。

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DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer

DC characteristics of a depletion-mode (D-mode) GaAs MOSFET with a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer (74 /spl Aring/) show low gate leakage current, negligible drain current hysteresis and higher than 10 V gale-drain two-terminal breakdown voltage. Compared to MESFET with the same gate length, channel material and fabricated by the same process, the GaAs MOSFET shows higher unity current gain cutoff frequency (Ft). The higher Ft for the MOSFET than that of the MESFET agrees with earlier theoretical predictions.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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