Multi-stage G-band (140-220 GHz) InP HBT amplifiers

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049026

M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlstrom, Z. Griffith, N. Parthasarathy, M. Rodwell

引用次数: 2

Abstract

We report three-stage monolithic amplifiers for the 140-220 GHz frequency band. Two designs have been fabricated in an InAlAs/InGaAs transferred-substrate HBT technology. The first design exhibited a small-signal gain of 12.0 dB at 170 GHz, and the second design exhibited a gain of 8.5 dB at 195 GHz.

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多级g波段(140-220 GHz) InP HBT放大器

我们报告了用于140-220 GHz频段的三级单片放大器。采用InAlAs/InGaAs转移衬底HBT技术制备了两种设计。第一种设计在170 GHz时具有12.0 dB的小信号增益，第二种设计在195 GHz时具有8.5 dB的增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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