高集电极电压下InGaP发射极hbt的可靠性

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049032

B. Yeats, M. Bonse, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, T. Shirley

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引用次数: 11

摘要

我们分析了双极晶体管击穿电压在BVceo和BVcbo之间的变化，这取决于总发射极和基极电阻的比率(Ree/Rbb)。我们给出了在使用Ree/Rbb = 1时偏置Vce = BVceo以上的InGaP发射极HBTs的寿命测试结果。在T/sub /，/sub /峰/ /spl / ap/ 330/spl度/C条件下，我们得到了标准外接电路和高击穿电压功率外接电路的MTTF /spl sim/ 1400 h。在Vce /spl lsim/ BVceo时，失效的特征是突然/spl β /漂移，而在更高的Vce时，逐渐/spl β /漂移也变得重要。我们认为这是首次发表的高Vce应力下gaas基HBTs的寿命测试研究。我们的研究结果进一步证明了ingap -发射器HBTs可以实现优异的可靠性。

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Reliability of InGaP emitter HBTs at high collector voltage

We show analytically how bipolar transistor breakdown voltage varies between BVceo and BVcbo, depending on the ratio of total emitter and base resistances (Ree/Rbb). We present lifetest results for InGaP emitter HBTs biased above Vce = BVceo while using Ree/Rbb = 1. We obtained MTTF /spl sim/ 1400 h at T/sub j/,/sub peak/ /spl ap/ 330/spl deg/C for both standard epi and a high breakdown voltage power epi. Failures are characterized by sudden /spl beta/ drift at Vce /spl lsim/ BVceo, while at higher Vce, gradual /spl beta/ drift also becomes important. We believe this is the first published lifetest study of GaAs-based HBTs stressed at high Vce. Our results further demonstrate the excellent reliability that can be achieved with InGaP-emitter HBTs.

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来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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