Proceedings. IEEE Lester Eastman Conference on High Performance Devices最新文献_第4页

The heterogeneous integration of InAlAs/InGaAs heterojunction diodes on GaAs: impact of wafer bonding on structural and electrical characteristics InAlAs/InGaAs异质结二极管在GaAs上的异质集成:晶圆键合对结构和电学特性的影响

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146778

Tong‐Ho Kim, C. Yi, April S. Brown, P. Moran, T. Kuech

引用次数: 0

Microwave power SiC MESFETs and GaN HEMTs 微波功率SiC mesfet和GaN hemt

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146748

A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, R. Beaupre, J. Garrett, J. Tucker

引用次数: 55

Ohmic contact technology in III-V nitrides using polarization effects in cap layers 基于帽层极化效应的III-V型氮化物欧姆接触技术

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146792

T. Gessmann, J. Graff, Y.-L. Li, E. Waldron, E. Schubert

引用次数: 2

An Ebers-Moll model for heterostructure bipolar transistors with tunnel junctions 具有隧道结的异质结构双极晶体管的Ebers-Moll模型

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146757

J. López-González, D. Keogh, P. Asbeck

引用次数: 0

Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs AlGaN/GaN hemt中栅极和漏极低频噪声的表征与分析

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146787

S. Hsu, P. Valizadeh, D. Pavlidis, J. Moon, M. Micovic, D. Wong, T. Hussain

引用次数: 19

On-chip out-of-plane high-Q inductors 片上平面外高q电感器

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146776

K. Van Schuylenbergh, C. Chua, D. Fork, J. Lu, B. Griffiths

{"title":"On-chip out-of-plane high-Q inductors","authors":"K. Van Schuylenbergh, C. Chua, D. Fork, J. Lu, B. Griffiths","doi":"10.1109/LECHPD.2002.1146776","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146776","url":null,"abstract":"Integrating high-Q inductors on semiconductor circuits has been an elusive goal for years due primarily to the eddy current losses and skin effect resistance associated with in-plane spiral inductors. Three-dimensional out-of-plane coils reduce eddy current and skin effect losses by virtue of their geometry and magnetic field orientation. However, out-of-plane coils were not deemed producible by standard semiconductor fabrication methods. This paper reports on a novel use of conventional semiconductor processing techniques to batch-fabricate three-dimensional high-Q inductors on a wide range of insulating or active semiconductor substrates. Thin molybdenum-chromium films are sputter deposited with an engineered built-in stress gradient so that, when patterned and released from their substrate, they curl into circular springs. These springs self-assemble into three-dimensional scaffolds that form highly conductive windings after being copper plated. Quality factors up to 85 are observed at 1 GHz on standard CMOS silicon. The in-circuit microcoil performance is also compared in BiCMOS silicon L-C oscillators to that of state-of-the-art planar spirals with slotted grounds.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121643896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers MMIC兼容的AlSb/InAs HEMT具有稳定的AlGaSb缓冲层

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146764

R. Tsai, N. Barsky, J. Lee, J. B. Boos, B. R. Bennett, R. Magno, C. Namba, P. Liu, A. Gutierrez, R. Lai

引用次数: 14

GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis GaInP/GaAs隧道集电极HBTs:基-集电极势垒高度分析

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146775

D. Keogh, R. Welty, J. López-González, C. Lutz, R. Welser, P. Asbeck

引用次数: 1

Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects 考虑捕获和热效应的GaN/AlGaN HEMT e类功率放大器设计

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146745

S. S. Islam, A. Anwar

引用次数: 7

DC and RF performance of InAs-based bipolar transistors at very low bias 极低偏置下基于inas的双极晶体管的直流和射频性能

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146765

D. Sawdai, C. Monier, A. Cavus, T. Block, R. Sandhu, M. Goorsky, A. Gutierrez-Aitken, J. Woodall, G. Wicks

{"title":"DC and RF performance of InAs-based bipolar transistors at very low bias","authors":"D. Sawdai, C. Monier, A. Cavus, T. Block, R. Sandhu, M. Goorsky, A. Gutierrez-Aitken, J. Woodall, G. Wicks","doi":"10.1109/LECHPD.2002.1146765","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146765","url":null,"abstract":"We fabricated metamorphic InAs bipolar junction transistors (BJTs) with a narrow bandgap in the base to reduce operating voltages, and we report RF results that we believe to be the first published for InAs-based bipolar transistors. InAs BJTs were grown by molecular beam epitaxy on InP substrates using strain-relief graded InAlAs buffer layers and optimized graded emitter-base and collector-base junctions. Large area devices (75/spl times/75 /spl mu/m/sup 2/ emitter) exhibit DC current gain /spl beta/ of 85. Higher /spl beta/ exceeding 100 was observed from tunneling-emitter bipolar transistors with various InAlAs barrier designs, indicating lower holes injection from the base to the emitter. Small-area devices have been fabricated using the standard front-side process from our InP HBT line. Microwave properties measured from devices with emitter size of 1.5/spl times/10 /spl mu/m/sup 2/ were very promising, showing a cutoff frequency over 50 GHz in devices with thick base and collector layers. An extremely low base-emitter voltage of 0.3 V was measured at peak frequency. These InAs-based bipolar transistors on InP substrates with good DC and RF performance demonstrate the viability of future narrow bandgap heterojunction bipolar transistors with state-of-the-art speed performance at low operating voltage.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"25 suppl_4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125825653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3