{"title":"考虑捕获和热效应的GaN/AlGaN HEMT e类功率放大器设计","authors":"S. S. Islam, A. Anwar","doi":"10.1109/LECHPD.2002.1146745","DOIUrl":null,"url":null,"abstract":"A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9 V supply voltage, calculated output power and power conversion efficiency are 89 mW and 58% at 1GHz which decrease to 84 mW and 54% at 3.8 GHz, respectively for a GaN/Al/sub 0.30/Ga/sub 0.70/N HEMT with gate width of 50 /spl mu/m.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects\",\"authors\":\"S. S. Islam, A. Anwar\",\"doi\":\"10.1109/LECHPD.2002.1146745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9 V supply voltage, calculated output power and power conversion efficiency are 89 mW and 58% at 1GHz which decrease to 84 mW and 54% at 3.8 GHz, respectively for a GaN/Al/sub 0.30/Ga/sub 0.70/N HEMT with gate width of 50 /spl mu/m.\",\"PeriodicalId\":137839,\"journal\":{\"name\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LECHPD.2002.1146745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LECHPD.2002.1146745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects
A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9 V supply voltage, calculated output power and power conversion efficiency are 89 mW and 58% at 1GHz which decrease to 84 mW and 54% at 3.8 GHz, respectively for a GaN/Al/sub 0.30/Ga/sub 0.70/N HEMT with gate width of 50 /spl mu/m.
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