B. Brar, K. Boutros, R.E. DeWarnes, V. Tilak, R. Shealy, L. Eastman
{"title":"Impact ionization in high performance AlGaN/GaN HEMTs","authors":"B. Brar, K. Boutros, R.E. DeWarnes, V. Tilak, R. Shealy, L. Eastman","doi":"10.1109/LECHPD.2002.1146791","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146791","url":null,"abstract":"We report compelling evidence of impact ionization in high-performance AlGaN/GaN HEMTs. Relevant to the present paper, these devices also show excellent low-leakage DC properties that contain signatures of impact ionization in the output and sub-threshold characteristics. Temperature and bias dependent data are presented to support the identification of impact ionization in the devices.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133922049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Nuttinck, E. Gebara, J. Laskar, N. Rorsman, J. Olsson, H. Zirath, K. Eklund, M. Harris
{"title":"Comparison between Si-LDMOS and GaN-based microwave power transistors","authors":"S. Nuttinck, E. Gebara, J. Laskar, N. Rorsman, J. Olsson, H. Zirath, K. Eklund, M. Harris","doi":"10.1109/LECHPD.2002.1146744","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146744","url":null,"abstract":"We present in this paper a performance comparison between Si-LDMOSTs with an optimized structure for high breakdown voltage, and AlGaN/GaN power HFETs, based on DC-I/V, small-signal and RF power measurement results.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131756421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Magno, B. R. Bennett, K. Ikossi, M. Ancona, E. Glaser, N. Papanicolaou, J. B. Boos, B. V. Shanabrook, A. Gutierrez
{"title":"Antimony-based quaternary alloys for high-speed low-power electronic devices","authors":"R. Magno, B. R. Bennett, K. Ikossi, M. Ancona, E. Glaser, N. Papanicolaou, J. B. Boos, B. V. Shanabrook, A. Gutierrez","doi":"10.1109/LECHPD.2002.1146766","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146766","url":null,"abstract":"Heterojunction bipolar transistors using In/sub z/Ga/sub 1-z/Sb for the base and In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ alloys for the collector and emitter have been explored. Modeling of the DC current-voltage characteristics indicate that current gain in excess of 500 may be obtained. The calculations show that the gain is a function of the base-collector conduction band offset. Molecular beam epitaxy (MBE) procedures for growing suitable alloys with a 6.2 /spl Aring/ lattice constant are under development. Double crystal X-ray diffraction, photoluminescence, Hall effect, and atomic force microscopy have been used to determine the quality of the materials grown. To minimize stress-induced defects, the In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ alloys were grown on undoped GaSb substrates with an AlSb buffer layer. The photoluminescence data indicate that good quality In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ (x=0.52 and y=0.3) with a band gap near 1 eV, is obtained using growth temperatures between 350 and 400/spl deg/C. Superior surface morphology is also found for growths in this temperature range. Te has been used to dope In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ n-type in the 10/sup 17/ cm/sup -3/ range. Good diode characteristics with an ideality factor of 1.1 have been obtained for In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ p-n junctions grown using Te for the n-type dopant and Be for the p-type.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122940051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Deng, W. Knap, S. Rurayantsev, R. Gaska, A. Khan, V. Ryzhii, E. Kamińska, A. Piotrowska, J. Lusakowski, M. Shur
{"title":"Subterahertz detection by high electron mobility transistors at large forward gate bias","authors":"Y. Deng, W. Knap, S. Rurayantsev, R. Gaska, A. Khan, V. Ryzhii, E. Kamińska, A. Piotrowska, J. Lusakowski, M. Shur","doi":"10.1109/LECHPD.2002.1146742","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146742","url":null,"abstract":"The electron delay time associated with the electron propagation across the FET gate barrier layer under high positive gate bias is expected to induce a dynamic negative differential conductance and enhance the growth of plasma waves in the channel. This dynamic negative conductance is related to the phase shift between the current and voltage waveforms caused by the electron time delay during the electron tunneling through the gate barrier. We present experimental investigations of the plasma wave detector responsivity at 200 GHz and 600 GHz radiation for long channel AlGaAs/GaAs and AlGaInN/GaN based HEMTs at 8 K and 300 K. The appearance of detector response correlated with an increase of the injected gate current under the forward gate bias is reported for both types of the investigated devices. Our results confirm that a large gate current can enhance the excitation of plasma waves.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127847256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D.C. Larrabee, G. Khodaparast, I. Kôno, D. S. King, S.J. Chune, M.B. Santos
{"title":"Picosecond time-resolved cyclotron resonance study of InSb quantum wells in a quantizing magnetic field","authors":"D.C. Larrabee, G. Khodaparast, I. Kôno, D. S. King, S.J. Chune, M.B. Santos","doi":"10.1109/LECHPD.2002.1146755","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146755","url":null,"abstract":"Using two-color pump-probe spectroscopy in a magnetic field, we have measured the time-resolved cyclotron resonance of photogenerated transient carriers in undoped and doped InSb quantum wells. We used an intense femtosecond pulse of near-infrared (NIR) radiation from a Ti:sapphire-based regenerative amplifier to create a large density of nonequilibrium carriers, which modifies the transmission of a delayed pulse of far-infrared (FIR) radiation from a free-electron laser. We monitored the dynamics of FIR transmission while varying the magnetic field and the time delay between the NIR and FIR pulses. Our data clearly show that the average electron cyclotron mass decreases as the electrons relax towards the band edge, as expected from the strong nonparabolicity of the InSb conduction band. Detailed lineshape analysis combined with Landau level calculations allowed us to determine the time evolution of the Fermi-Dirac distribution function of nonequilibrium. two-dimensional carriers in a quantizing magnetic field.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117005311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"30 years of accomplishments in compound semiconductor materials and devices attributable to Prof. Lester F. Eastman","authors":"M. Yoder","doi":"10.1109/LECHPD.2002.1146729","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146729","url":null,"abstract":"To those that best know him, Prof. Eastman is not only one of the most congenial academicians in the world, but is a walking encyclopedia of knowledge relating to compound semiconductor materials, structures, and devices. Moreover, he is always most willing to enthusiastically share the details of his knowledge. His personal contributions to the field are multitudinous. He has mentored over 110 successful Ph.D. candidates. Eighteen of these have founded new businesses, 19 have become academicians, 16 have become directors, managers, CEOs, or VPs in industry, one is currently the associate director of the FBI, and 3 have already retired. Three hundred and eighty seven of his over 700 papers have been cited in the Science Citation Index, with 9 of them having over 100 citations each. His earliest cited paper was published in 1964. In this paper, several of his traits and accomplishments along with their impact on his students, the DoD, the scientific community, and our standard of living are highlighted. Projections are also made of future impacts.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134359092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}