Comparison between Si-LDMOS and GaN-based microwave power transistors

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146744

S. Nuttinck, E. Gebara, J. Laskar, N. Rorsman, J. Olsson, H. Zirath, K. Eklund, M. Harris

引用次数: 7

Abstract

We present in this paper a performance comparison between Si-LDMOSTs with an optimized structure for high breakdown voltage, and AlGaN/GaN power HFETs, based on DC-I/V, small-signal and RF power measurement results.

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Si-LDMOS与gan基微波功率晶体管的比较

本文基于DC-I/V、小信号和射频功率测量结果，对高击穿电压结构优化的Si-LDMOSTs与AlGaN/GaN功率hfet的性能进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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