冲击电离在高性能AlGaN/GaN hemt中的应用

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146791

B. Brar, K. Boutros, R.E. DeWarnes, V. Tilak, R. Shealy, L. Eastman

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引用次数: 46

摘要

我们报告了高性能AlGaN/GaN hemt中碰撞电离的令人信服的证据。与本论文相关的是，这些器件还显示出优异的低漏直流特性，在输出和亚阈值特性中包含冲击电离的特征。提出了温度和偏置相关数据，以支持器件中冲击电离的识别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact ionization in high performance AlGaN/GaN HEMTs

We report compelling evidence of impact ionization in high-performance AlGaN/GaN HEMTs. Relevant to the present paper, these devices also show excellent low-leakage DC properties that contain signatures of impact ionization in the output and sub-threshold characteristics. Temperature and bias dependent data are presented to support the identification of impact ionization in the devices.

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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