Proceedings. IEEE Lester Eastman Conference on High Performance Devices最新文献_第3页

Molecular beam deposition of low-resistance polycrystalline InAs 低阻多晶InAs的分子束沉积

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146752

D. Scott, M. Urteaga, N. Parthasarathy, J. English, M. Rodwell

{"title":"Molecular beam deposition of low-resistance polycrystalline InAs","authors":"D. Scott, M. Urteaga, N. Parthasarathy, J. English, M. Rodwell","doi":"10.1109/LECHPD.2002.1146752","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146752","url":null,"abstract":"We report low-resistance Si-doped polycrystalline InAs (poly-InAs:Si) using molecular beam deposition. We believe this to be the first report of low resistance in poly-InAs. The poly-InAs:Si was deposited using conventional molecular beam epitaxy (MBE) onto SiN/sub x/ coated GaAs substrates at various growth temperatures and deposition rates. Poly-InAs samples with thicknesses of 2000 /spl Aring/ and 1000 /spl Aring/ were grown for Hall and TLM measurements, respectively. We have observed electron concentrations from 8.8/spl times/10/sup 18/ to 1.5/spl times/10/sup 19/ cm/sup -3/ and respective mobilities from 886 to 441 cm/sup 2//Vs. This range of values suggests that the poly-InAs:Si has a doping-mobility product, and hence bulk conductivity, that is only 3-4 times lower than that of similarly doped InGaAs lattice-matched to InP. The typical bulk resistivity determined by TLM measurements is approximately 1.4/spl times/10/sup -3/ /spl Omega/-cm. Contact resistance to the poly-InAs with a Ti/Pt/Au metal stack less than 1.6/spl times/10/sup -7/ /spl Omega/-cm/sup 2/. The combined low contact access resistance and low junction capacitance found in poly-InAs:Si may be useful in a variety of III-V device applications.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130288532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Physics of GaN-based high-power lasers 氮化镓基高功率激光器的物理学

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146760

J. Piprek, S. Nakamura

引用次数: 2

AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates 通过分子束外延在蓝宝石、SiC和HVPE GaN模板上生长的AlGaN/GaN hemt

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146740

N. Weimann, M. Manfra, J. Hsu, K. Baldwin, L. Pfeiffer, K. West, S. Chu, D. Lang, R. Molnar

{"title":"AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates","authors":"N. Weimann, M. Manfra, J. Hsu, K. Baldwin, L. Pfeiffer, K. West, S. Chu, D. Lang, R. Molnar","doi":"10.1109/LECHPD.2002.1146740","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146740","url":null,"abstract":"Molecular beam epitaxy of GaN and related alloys is becoming a rival to the more established metalorganic vapor phase epitaxy. Excellent control of impurity, interface abruptness, and in situ monitoring of the growth are driving the increase in quality of MBE epilayers. We have developed nucleation schemes with plasma-assisted MBE on three types of substrates, consisting of sapphire, semi-insulating (SI-) SiC, and HVPE SI-GaN templates on sapphire. While sapphire and SI-SiC are established substrates for the growth of AlGaN/GaN HEMT epilayers, HVPE GaN templates may provide a path to low-cost large-diameter substrates for electronic devices. We compare device results of HEMTs fabricated on these substrates. As a metric for device performance, the saturated RF power output in class A operation is measured at 2 GHz. We achieved a saturated power density of 2.2 W/mm from HEMTs on sapphire, 1.1 W/mm from HEMTs on HVPE GaN templates on sapphire, and 6.3 W/mm. from HEMTs on semi-insulating 6H-SiC substrates. The difference in output power can be attributed to self-heating due to insufficient thermal conductivity of the sapphire substrate, and to trapping in the compensation-doped HVPE template.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121165572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

100 A and 3.1 kV 4H-SiC GTO thyristors 100a和3.1 kV 4H-SiC GTO晶闸管

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146732

S. Van Campen, A. Ezis, J. Zingaro, G. Storaska, R. C. Clarke, K. Elliott, V. Temple, D. Hits, M. Thompson, K. Roe, T. Hansen

引用次数: 3

Channel recessed 4H-SiC MESFETs with F/sub t/ of 14.5GHz and F/sub max/ of 40GHz 通道内嵌式4H-SiC mesfet, F/sub /为14.5GHz, F/sub / max/为40GHz

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146734

H. Cha, C. I. Thomas, G. Koley, Hyungtak Kim, L. F. Eastman, M. Spencer

引用次数: 6

InP/GaAsSb/InP double heterojunction bipolar transistors InP/GaAsSb/InP双异质结双极晶体管

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146773

C. Bolognesi, M. Dvorak, S. Watkins

{"title":"InP/GaAsSb/InP double heterojunction bipolar transistors","authors":"C. Bolognesi, M. Dvorak, S. Watkins","doi":"10.1109/LECHPD.2002.1146773","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146773","url":null,"abstract":"InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages BV/sub CEO/ >6 V. InP/GaAsSb/InP DHBTs are particularly appealing because excellent device figures of merit are achievable with relatively simple structures involving abrupt junctions and uniform doping levels and compositions. This is a tremendous manufacturability advantage and the reason why some organizations have moved aggressively toward GaAsSb DHBT production despite a relative scarcity of information on the physical properties of the GaAsSb alloy in comparison to GaInAs. The present paper reviews some of the key concepts associated with the use of GaAsSb base layers, and discusses the physical operation of InP/GaAsSb/InP DHBTs. In particular, we describe the implications of the staggered band lineup at the E/B and B/C heterojunctions for charge storage in the devices, and show that InP/GaAsSb/InP DHBTs offer inherent advantages from that point of view. We also show that GaAsSb-based DHBTs can be expected to display better scalability than GaInAs-based devices because of their inherently superior base ohmic contacts.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130478579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors AlGaN/GaN高电子迁移率晶体管表面钝化膜降低电流崩溃的比较

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146790

B. Luo, R. Mehandru, J. Kim, F. Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

引用次数: 0

RF 4H-SiC bipolar junction transistors RF 4H-SiC双极结晶体管

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146750

I. Perez-Wurfl, A. Konstantinov, J. Torviko, B. van Zeghbroeck

引用次数: 1

Evaluation of interfaces in narrow InAs/AlSb quantum wells 窄InAs/AlSb量子阱中界面的评价

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146754

J. Tang, D.C. Larrabee, B. Brinson, G. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, O. Suekane, S. Sasa, M. Inoue, K. Kolokolov, J. Li, C. Ning

引用次数: 2

Ge incorporation in SiC and the effects on device performance SiC中掺入锗及其对器件性能的影响

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146751

K.J. Roe, M. Dashiell, G. Xuan, E. Ansorge, G. Katulka, N. Sustersic, X. Zhang, J. Kolodzey

引用次数: 5