RF 4H-SiC bipolar junction transistors

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146750

I. Perez-Wurfl, A. Konstantinov, J. Torviko, B. van Zeghbroeck

引用次数: 1

Abstract

We report on the progress towards a silicon carbide (SiC) bipolar transistor aimed at operation at RF frequencies up to 3 GHz. Devices with a 5 /spl mu/m emitter stripe width were fabricated and tested on-chip with cascade probes and an HP8510C network analyzer. These devices have an f/sub t//f/sub max/ of 0.6/0.2GHz. To best of our knowledge the devices represent a first demonstration of an RF 4H-SiC BJT.

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RF 4H-SiC双极结晶体管

我们报告了碳化硅(SiC)双极晶体管的进展，其目标是在高达3 GHz的射频频率下工作。利用级联探头和HP8510C网络分析仪，制作了5 /spl μ m发射极条纹宽度的器件，并在片上进行了测试。这些设备的f/sub / t//f/sub max/频率为0.6/0.2GHz。据我们所知，该器件代表了RF 4H-SiC BJT的首次演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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