B. Luo, R. Mehandru, J. Kim, F. Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa
{"title":"AlGaN/GaN高电子迁移率晶体管表面钝化膜降低电流崩溃的比较","authors":"B. Luo, R. Mehandru, J. Kim, F. Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa","doi":"10.1109/LECHPD.2002.1146790","DOIUrl":null,"url":null,"abstract":"Three different passivation layers (SiN/sub x/, MgO and Sc/sub 2/O/sub 3/) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN/sub x/ produced /spl sim/80-85% recovery of the drain-source current, independent of whether SiH/sub 4//NH/sub 3/ or SiD/sub 4//ND/sub 3/ plasma chemistries were employed. Both the Sc/sub 2/O/sub 3/ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and /spl sim/80-95% recovery in AlGaN-cap structures. The Sc/sub 2/O/sub 3/ had superior long-term stability, with no change in HEMT behavior over 5 months aging.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors\",\"authors\":\"B. Luo, R. Mehandru, J. Kim, F. Ren, B. Gila, A. Onstine, C. Abernathy, S. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa\",\"doi\":\"10.1109/LECHPD.2002.1146790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three different passivation layers (SiN/sub x/, MgO and Sc/sub 2/O/sub 3/) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN/sub x/ produced /spl sim/80-85% recovery of the drain-source current, independent of whether SiH/sub 4//NH/sub 3/ or SiD/sub 4//ND/sub 3/ plasma chemistries were employed. Both the Sc/sub 2/O/sub 3/ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and /spl sim/80-95% recovery in AlGaN-cap structures. The Sc/sub 2/O/sub 3/ had superior long-term stability, with no change in HEMT behavior over 5 months aging.\",\"PeriodicalId\":137839,\"journal\":{\"name\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LECHPD.2002.1146790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LECHPD.2002.1146790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
Three different passivation layers (SiN/sub x/, MgO and Sc/sub 2/O/sub 3/) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiN/sub x/ produced /spl sim/80-85% recovery of the drain-source current, independent of whether SiH/sub 4//NH/sub 3/ or SiD/sub 4//ND/sub 3/ plasma chemistries were employed. Both the Sc/sub 2/O/sub 3/ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and /spl sim/80-95% recovery in AlGaN-cap structures. The Sc/sub 2/O/sub 3/ had superior long-term stability, with no change in HEMT behavior over 5 months aging.
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