Proceedings. IEEE Lester Eastman Conference on High Performance Devices最新文献_第2页

Novel Ni-based ohmic contacts to n-SiC for high temperature and high power device applications 用于高温和高功率器件应用的新型ni基n-SiC欧姆触点

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146733

M. Cole, J. Demaree, C. Hubbard, M. Wood, M. Ervin

{"title":"Novel Ni-based ohmic contacts to n-SiC for high temperature and high power device applications","authors":"M. Cole, J. Demaree, C. Hubbard, M. Wood, M. Ervin","doi":"10.1109/LECHPD.2002.1146733","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146733","url":null,"abstract":"Novel Pt/Ti/WSi/Ni composite ohmic contacts to n-SiC were investigated as a function of annealing temperatures up to 1000/spl deg/C. The onset of ohmic behavior occurred after annealing at 900/spl deg/C. Annealing at temperatures between 950 and 1000/spl deg/C yielded excellent ohmic behavior. At these temperatures the contact-SiC interface was smooth, defect free and characterized by a narrow Ni/sub 2/Si reaction region. The annealed contacts possessed smooth surface morphologies and exhibited minimal contact expansion. The residual carbon, resultant from SiC decomposition, was constrained by reaction with the WSi and Ti metallization layers forming carbide phases of W and Ti. The locations of the carbide phases were spatially distant from the metal semiconductor interface. The anneal optimized (annealed at 950 and 1000/spl deg/C for 30 s) Pt/Ti/WSi/Ni ohmic contacts to n-SiC were evaluated for thermal stability via pulsed/cyclic thermal fatigue and aging experiments at 650/spl deg/C. Negligible changes in the electrical properties, microstructure, and surface morphology/roughness were observed for both annealed ohmic contacts in response to 100 cycles of acute cyclic thermal fatigue. Aging of the 950/spl deg/C annealed contact for 75 hours at 650/spl deg/C resulted in electrical failure and chemical interdiffusion/reaction between the contact and SiC substrate. The 1000/spl deg/C annealed contact retained omicity after 100 h of aging and was found to be chemically and microstructurally stable. These findings indicate that the 1000/spl deg/C annealed Pt/Ti/WSi/Ni ohmic contact to n-SiC is thermally stable and merits strong, potential for utilization in high temperature and pulsed power devices.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126493483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The status of fiber optics 光纤的现状

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146727

D. Welch

引用次数: 0

Simulations of high linearity and high efficiency of class B power amplifiers in GaN HEMT technology GaN HEMT技术中B类功率放大器的高线性和高效率仿真

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146737

V. Paidi, S. Xie, R. Coffie, Utkarsh Mishra, S. Long, M. Rodwell

引用次数: 5

Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs 凹槽长度对栅极凹槽AlGaN/GaN hemt直流和射频性能的影响

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146784

A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. Dabiran, P. Chow, I. Adesida

引用次数: 6

40 GHz MMIC power amplifier in InP DHBT technology 采用InP DHBT技术的40ghz MMIC功率放大器

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146774

Yun Wei, K. Sundararajan, M. Urteaga, Z. Griffith, D. Scott, V. Paidi, N. Parthasarathy, M. Rodwell

引用次数: 2

Low frequency noise in Al/sub 0.4/Ga/sub 0.6/N thin films Al/sub 0.4/Ga/sub 0.6/N薄膜中的低频噪声

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146746

N. Pala, S. Rumyantsev, R. Gaska, M. Shur, J. Yang, X. Hu, G. Simin, M.A. Khan

引用次数: 0

The electrical effects of DNA as the gate electrode of MOS transistors DNA作为MOS晶体管栅电极的电学效应

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146761

M. Dashiell, A.T. Kalambur, R. Leeson, K.J. Roe, J. Rabolt, J. Kolodzey

引用次数: 19

Professor Lester F. Eastman Lester F. Eastman教授

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146723

M. Shur

引用次数: 0

CCD measurements of guided optical mode attenuation in GaN layers 氮化镓层中导光模式衰减的CCD测量

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146759

G. Bu, D. Čiplys, M. Shur, R. Gaska, R. Rimeika, A. Khan, J. Yang

{"title":"CCD measurements of guided optical mode attenuation in GaN layers","authors":"G. Bu, D. Čiplys, M. Shur, R. Gaska, R. Rimeika, A. Khan, J. Yang","doi":"10.1109/LECHPD.2002.1146759","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146759","url":null,"abstract":"The wide band gap and strong piezoelectric effects make GaN-based materials attractive for visible and ultraviolet optoelectronic applications, especially for optical integration devices. The optical waveguide is a fundamental component of integrated optical devices. The measurement of the propagation loss is essential for waveguide characterization, where the loss is due to absorption and scattering. The conventional methods require the measurement of the absolute optical power, polishing of sample edges, and, sometimes, the sliding of a coupling prism. Therefore, the conventional techniques are not very convenient or controllable. In this paper, a straightforward method has been proposed to characterize the attenuation of guided modes in GaN layer by employing a CCD system. As an optical mode propagates in the waveguide, the light is scattered and a characteristic light track appears on the waveguide surface. It is assumed that the scattered light is proportional to the guided mode intensity. By taking a digital picture of the track for each guided mode, the light intensity variation along the track is obtained. We used this technique to measure the attenuation of guided optical modes in multi-mode GaN layers grown by MOCVD on (0001) sapphire substrates. The results demonstrate that the CCD technique is a fast, convenient and reliable method to characterize attenuation in optical waveguides.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128766585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs AlGaN/GaN hemt上高重复性低损伤栅极刻蚀的数字刻蚀

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146788

D. Buttari, S. Heikman, S. Keller, U. Mishra

引用次数: 37