Low frequency noise in Al/sub 0.4/Ga/sub 0.6/N thin films

Abstract

Low-frequency noise in Al/sub 0.4/GaN/sub 0.6/ thin films (50 nm) was measured at room and elevated temperatures as a function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. The Hooge parameter, /spl alpha/, was estimated to be about 7. The activation energy for observed g-r noise was found to be E/sub a//spl sim/1.0 eV. This activation energy is consistent, with the activation energy observed for g-r noise in AlGaN/GaN HFETs.