N. Pala, S. Rumyantsev, R. Gaska, M. Shur, J. Yang, X. Hu, G. Simin, M.A. Khan
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Low frequency noise in Al/sub 0.4/Ga/sub 0.6/N thin films
Low-frequency noise in Al/sub 0.4/GaN/sub 0.6/ thin films (50 nm) was measured at room and elevated temperatures as a function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. The Hooge parameter, /spl alpha/, was estimated to be about 7. The activation energy for observed g-r noise was found to be E/sub a//spl sim/1.0 eV. This activation energy is consistent, with the activation energy observed for g-r noise in AlGaN/GaN HFETs.
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