Physics of GaN-based high-power lasers

Abstract

Advanced device simulation is used to analyze performance and device physics of milestone nitride laser diodes. These lasers exhibit the highest room-temperature continuous-wave output power measured thus far. The laser model self-consistently combines band structure and free-carrier gain calculations with two-dimensional simulations of waveguiding, carrier transport, and heat flux. Material parameters used in the model are carefully evaluated. Excellent agreement between simulations and measurements is achieved. The maximum output power is limited by electron leakage into the p-doped ridge. Leakage escalation is caused by strong self-heating, gain reduction, and elevated carrier density within the quantum wells. Improved heat-sinking is predicted to allow for a significant increase of the maximum output power.