A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, R. Beaupre, J. Garrett, J. Tucker
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引用次数: 55
摘要
我们已经从单个21.6 mm栅极外围器件(2.9 W/mm)制造了450 MHz输出功率超过60 W的SiC MESFET，从单个14.4 mm SiC MESFET器件(1.9 W/mm)制造了3 GHz输出功率27 W的SiC MESFET。我们还展示了用于X波段(10 GHz)应用的400 /spl mu/m GaN/AlGaN HEMT器件的超过6.7 W/mm的连续功率。这些优异的器件性能归功于改进的衬底和外延膜质量，优化的器件热管理和增强的器件制造技术。对不同来源的衬底和外延膜进行了比较，其中一些衬底的SiC微管数量明显减少，并通过x射线形貌和光学缺陷作图表征了外延缺陷。
We have fabricated SiC MESFETs with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 /spl mu/m GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial film quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.
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