{"title":"具有隧道结的异质结构双极晶体管的Ebers-Moll模型","authors":"J. López-González, D. Keogh, P. Asbeck","doi":"10.1109/LECHPD.2002.1146757","DOIUrl":null,"url":null,"abstract":"This paper presents an Ebers-Moll model for HBTs and DHBTs in which tunnelling transport plays an important role at the base-emitter (BE) and/or base-collector (BC) junction. Devices of this type include GaAs or InP-based HBTs with abrupt heterojunctions, as well as a number of devices designed intentionally with thin tunnel layers at the B-E or B-C junctions. For these structures, the conventional drift-diffusion formalisms (and numerical simulators based on them) are inadequate. The present model allows a quasi-analytical description of the device characteristics, assuming one dimensional structure. The model is applied here to the study of tunnel emitter and tunnel collector InGaP-HBTs. Forward and reverse Gummel plots can be analysed in relation to the tunnelling characteristics of the junction barriers.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Ebers-Moll model for heterostructure bipolar transistors with tunnel junctions\",\"authors\":\"J. López-González, D. Keogh, P. Asbeck\",\"doi\":\"10.1109/LECHPD.2002.1146757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an Ebers-Moll model for HBTs and DHBTs in which tunnelling transport plays an important role at the base-emitter (BE) and/or base-collector (BC) junction. Devices of this type include GaAs or InP-based HBTs with abrupt heterojunctions, as well as a number of devices designed intentionally with thin tunnel layers at the B-E or B-C junctions. For these structures, the conventional drift-diffusion formalisms (and numerical simulators based on them) are inadequate. The present model allows a quasi-analytical description of the device characteristics, assuming one dimensional structure. The model is applied here to the study of tunnel emitter and tunnel collector InGaP-HBTs. Forward and reverse Gummel plots can be analysed in relation to the tunnelling characteristics of the junction barriers.\",\"PeriodicalId\":137839,\"journal\":{\"name\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LECHPD.2002.1146757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LECHPD.2002.1146757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ebers-Moll model for heterostructure bipolar transistors with tunnel junctions
This paper presents an Ebers-Moll model for HBTs and DHBTs in which tunnelling transport plays an important role at the base-emitter (BE) and/or base-collector (BC) junction. Devices of this type include GaAs or InP-based HBTs with abrupt heterojunctions, as well as a number of devices designed intentionally with thin tunnel layers at the B-E or B-C junctions. For these structures, the conventional drift-diffusion formalisms (and numerical simulators based on them) are inadequate. The present model allows a quasi-analytical description of the device characteristics, assuming one dimensional structure. The model is applied here to the study of tunnel emitter and tunnel collector InGaP-HBTs. Forward and reverse Gummel plots can be analysed in relation to the tunnelling characteristics of the junction barriers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
