MMIC兼容的AlSb/InAs HEMT具有稳定的AlGaSb缓冲层

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146764

R. Tsai, N. Barsky, J. Lee, J. B. Boos, B. R. Bennett, R. Magno, C. Namba, P. Liu, A. Gutierrez, R. Lai

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引用次数: 14

摘要

在本文中，我们展示了具有AlGaSb/AlSb变质缓冲层的AlSb/InAs hemt的最先进的130 GHz和110 GHz的f/sub T/和f/sub max/结果，证明了InAs通道hemt在暴露于空气中是稳定的，并且与标准MMIC生产工艺兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers

In this paper, we present state-of-the-art f/sub T/ and f/sub max/ results of 130 GHz, and 110 GHz for AlSb/InAs HEMTs with AlGaSb/AlSb metamorphic buffer layers that demonstrate InAs-channel HEMTs that are stable with exposure to air and are compatible with standard MMIC production processes.

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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