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Proceedings. IEEE Lester Eastman Conference on High Performance Devices最新文献

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High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs 用于LNA和接收器ic的高线性，鲁棒，AlGaN-GaN hemt
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146782
P. Parikh, Y. Wu, M. Moore, P. Chavarkar, Umesh K. Mishra, R. Neidhard, L. Kehias, T. Jenkins
{"title":"High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs","authors":"P. Parikh, Y. Wu, M. Moore, P. Chavarkar, Umesh K. Mishra, R. Neidhard, L. Kehias, T. Jenkins","doi":"10.1109/LECHPD.2002.1146782","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146782","url":null,"abstract":"AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also garnered interest for low noise receiver applications. In this paper, we discuss the noise figure and linearity of robust GaN HEMTs for LNA integrated circuits. GaN HEMTs with a low noise figure of 0.75 dB at X-band are presented. We believe this is the first comprehensive report combining all major requirements of a robust LNA-receiver technology: low noise figure, high linearity and high survivability.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128132757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Three decades of our graduate research and education in compound semiconductor materials and devices 我们在化合物半导体材料和器件方面的三十年研究生研究和教育
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146724
L. Eastman
{"title":"Three decades of our graduate research and education in compound semiconductor materials and devices","authors":"L. Eastman","doi":"10.1109/LECHPD.2002.1146724","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146724","url":null,"abstract":"In the 37 years of activity in Cornell University's research on compound semiconductor materials and devices, much has been discovered, and many students have been educated. The materials include GaAs, AlGaAs, InGaAs, InAlAs, InGaP, GaN, AlGaN, and InN. The devices have included microwave MESFETs, HEMTs, and HBTs, as well as semiconductor lasers for high speed modulation. The students and results have been hired and transferred to industry, where they have made strong contributions to devices for radar and communication.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133289765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced large-signal modeling of GaN-HEMTs gan - hemt的先进大信号建模
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146747
M. Berroth, E. Chigaeva, I. Dettmann, N. Wieser, W. Vogel, H. Roll, F. Scholz, H. Schweizer
{"title":"Advanced large-signal modeling of GaN-HEMTs","authors":"M. Berroth, E. Chigaeva, I. Dettmann, N. Wieser, W. Vogel, H. Roll, F. Scholz, H. Schweizer","doi":"10.1109/LECHPD.2002.1146747","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146747","url":null,"abstract":"For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large-signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S/sub 21/ at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115212638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias AlGaN/GaN hemt功率和效率对B类偏压负载电阻的影响
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146739
V. Kaper, V. Tilak, B. Green, T. Prunty, J. Smart, L. Eastman, J. Shealy
{"title":"Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias","authors":"V. Kaper, V. Tilak, B. Green, T. Prunty, J. Smart, L. Eastman, J. Shealy","doi":"10.1109/LECHPD.2002.1146739","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146739","url":null,"abstract":"The material properties of GaN and the AlGaN/GaN heterostructure such as high breakdown field and high sheet charge density, allow AlGaN/GaN HEMTs to be operated at significantly higher drain bias voltages as compared to other III-V compound semiconductor FETs. As expected, larger RF voltage and current swings result in higher normalized output power at microwave frequencies. AlGaN/GaN HEMTs are capable of generating output power density in excess of 10 W/mm in the X-band, which is at least an order of magnitude larger than what is obtainable with GaAs FETs. In this paper, we discuss the effect of the load impedance on measured output power (P/sub out/) and efficiency (/spl eta/) at various drain bias conditions in class B mode. Dynamic loadlines; extracted at the device's output are used for analysis of the trade-off between voltage and current swings at different load resistances and its effect on output power and efficiency.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132858717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Thermal and trapping effects in GaN-based MESFETs 氮化镓基mesfet的热效应和俘获效应
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146738
S. S. Islam, A. Anwar
{"title":"Thermal and trapping effects in GaN-based MESFETs","authors":"S. S. Islam, A. Anwar","doi":"10.1109/LECHPD.2002.1146738","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146738","url":null,"abstract":"RF power performances of GaN-MESFETs are reported using a physics-based model that incorporates dispersion in the output resistance and transconductance due to traps and thermal effects. Calculated I-V characteristics are in excellent agreement with the measured results. Taking thermal effects into account, the maximum output power of a 0.3 /spl mu/m/spl times/100 /spl mu/m GaN MESFET is 22 dBm at a power gain of 4.2 dB at 4 GHz. The corresponding quantities are 27 dBm and 6.4 dB, respectively if a constant channel temperature of 300 K is assumed. At elevated temperatures, compression in output power, gain and PAE is less in MESFETs with longer gate lengths.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134263537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advances in diamond surface channel FET technology with focus on large signal properties 金刚石表面沟道场效应管技术的进展，重点是大信号特性
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146736
M. Kubovi, A. Aleksov, A. Denisenko, E. Kohn
{"title":"Advances in diamond surface channel FET technology with focus on large signal properties","authors":"M. Kubovi, A. Aleksov, A. Denisenko, E. Kohn","doi":"10.1109/LECHPD.2002.1146736","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146736","url":null,"abstract":"Field effect transistors based on a hydrogen induced p-type surface channel (surface channel FETs) have shown steady progress in the past. Devices with sub-/spl mu/m gatelength have been fabricated and cut-off frequencies up to the mm-wave range could be extracted. However, large signal and power performance could only be reported recently. This is due to severe stability and degradation problems. These phenomena are largely related to the highly polar H-terminated diamond surface, although details are still in discussion. This contribution describes these instabilities and the recent progress obtained. To some extent this may also shine some light onto the nature of instabilities observed in GaN based devices.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Packaging of microwave integrated circuits operating beyond 100 GHz 工作频率超过100ghz的微波集成电路封装
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146777
E. S. Daniel, V. Sokolov, S. Sommerfeldt, J. Bublitz, K. Olson, Barry K. Gilbert, L. Samoska, D. Chow
{"title":"Packaging of microwave integrated circuits operating beyond 100 GHz","authors":"E. S. Daniel, V. Sokolov, S. Sommerfeldt, J. Bublitz, K. Olson, Barry K. Gilbert, L. Samoska, D. Chow","doi":"10.1109/LECHPD.2002.1146777","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146777","url":null,"abstract":"Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5 dB and return loss better than -17 dB, from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method.. Split-block waveguide packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe and antipodal finline.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125307046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
AlGaN/GaN-HEMTs for power applications up to 40 GHz AlGaN/ gan - hemt用于高达40 GHz的电源应用
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146793
R. Kiefer, R. Quay, S. Muller, K. Kohler, F. van Raay, B. Raynor, W. Pletschen, H. Massler, S. Ramberger, M. Mikulla, G. Weimann
{"title":"AlGaN/GaN-HEMTs for power applications up to 40 GHz","authors":"R. Kiefer, R. Quay, S. Muller, K. Kohler, F. van Raay, B. Raynor, W. Pletschen, H. Massler, S. Ramberger, M. Mikulla, G. Weimann","doi":"10.1109/LECHPD.2002.1146793","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146793","url":null,"abstract":"A 0.15 /spl mu/m T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 /spl mu/m gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f/sub t/ and f/sub max/ of 65 GHz and 149 GHz, respectively. Large periphery 720 /spl mu/m gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125525405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Silicon-germanium power devices at low temperatures for deep-space applications 用于深空应用的低温硅锗功率器件
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146763
A. Vijh, V. Kapoor
{"title":"Silicon-germanium power devices at low temperatures for deep-space applications","authors":"A. Vijh, V. Kapoor","doi":"10.1109/LECHPD.2002.1146763","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146763","url":null,"abstract":"Silicon-germanium heterostructure. based 1-watt n-channel metal-oxide-semiconductor modulation-doped field effect transistors (MOS-MODFETs) with 6 /spl mu/m gate lengths and 1 mm total gate widths have been designed, fabricated and tested from 300 K to 90 K. The devices were fabricated by an ion-implanted process and employ a low-temperature thermal oxide and PECVD deposited oxide as the gate insulator. The devices showed a saturation current of approximately 77 mA at V/sub DS/=14 V, V/sub GS/=5V at 90 K, corresponding to a power dissipation of 1 W. Because they employ oxide as a gate dielectric, the devices have a low gate leakage current of <1 nA at V/sub GS/=10 V.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129155084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intersubband transitions in narrow InAs/AlSb quantum wells 窄InAs/AlSb量子阱的子带间跃迁
Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI: 10.1109/LECHPD.2002.1146771
D. Larrabee, J. Tang, M. Liang, G. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, O. Suekane, S. Sasa, M. Inoue, K. Kolokolov, J. Li, C. Ning
{"title":"Intersubband transitions in narrow InAs/AlSb quantum wells","authors":"D. Larrabee, J. Tang, M. Liang, G. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, O. Suekane, S. Sasa, M. Inoue, K. Kolokolov, J. Li, C. Ning","doi":"10.1109/LECHPD.2002.1146771","DOIUrl":"https://doi.org/10.1109/LECHPD.2002.1146771","url":null,"abstract":"We have investigated intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells. In wells from 7 to 10 nm wide, the ISBT energy increases with decreasing well width and temperature. We do not observe photoluminescence (PL) from these wells. In wells from 2.4 to 6 nm wide, we observe PL but not ISBTs. We have calculated the band structure of these samples using an 8 band k.p theory including strain and many-body effects. We have modelled the dependence of the ISBT energy on well width and temperature. In addition, we have observed the effects on ISBTs of QW interface type and Si doping in the well.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132087291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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