R. Kiefer, R. Quay, S. Muller, K. Kohler, F. van Raay, B. Raynor, W. Pletschen, H. Massler, S. Ramberger, M. Mikulla, G. Weimann
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AlGaN/GaN-HEMTs for power applications up to 40 GHz
A 0.15 /spl mu/m T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 /spl mu/m gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f/sub t/ and f/sub max/ of 65 GHz and 149 GHz, respectively. Large periphery 720 /spl mu/m gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.
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