Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias

V. Kaper, V. Tilak, B. Green, T. Prunty, J. Smart, L. Eastman, J. Shealy
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引用次数: 7

Abstract

The material properties of GaN and the AlGaN/GaN heterostructure such as high breakdown field and high sheet charge density, allow AlGaN/GaN HEMTs to be operated at significantly higher drain bias voltages as compared to other III-V compound semiconductor FETs. As expected, larger RF voltage and current swings result in higher normalized output power at microwave frequencies. AlGaN/GaN HEMTs are capable of generating output power density in excess of 10 W/mm in the X-band, which is at least an order of magnitude larger than what is obtainable with GaAs FETs. In this paper, we discuss the effect of the load impedance on measured output power (P/sub out/) and efficiency (/spl eta/) at various drain bias conditions in class B mode. Dynamic loadlines; extracted at the device's output are used for analysis of the trade-off between voltage and current swings at different load resistances and its effect on output power and efficiency.
AlGaN/GaN hemt功率和效率对B类偏压负载电阻的影响
与其他III-V型化合物半导体场效应管相比,GaN和AlGaN/GaN异质结构的材料特性(如高击穿场和高片电荷密度)允许AlGaN/GaN hemt在更高的漏极偏置电压下工作。正如预期的那样,更大的射频电压和电流波动导致微波频率下更高的归一化输出功率。AlGaN/GaN hemt能够在x波段产生超过10 W/mm的输出功率密度,这至少比GaAs fet的输出功率密度大一个数量级。本文讨论了负载阻抗对B类模式下不同漏极偏置条件下测量输出功率(P/sub - out/)和效率(/spl eta/)的影响。动态载重线;在设备输出处提取的数据用于分析在不同负载电阻下电压和电流波动之间的权衡及其对输出功率和效率的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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