工作频率超过100ghz的微波集成电路封装

E. S. Daniel, V. Sokolov, S. Sommerfeldt, J. Bublitz, K. Olson, Barry K. Gilbert, L. Samoska, D. Chow
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引用次数: 9

摘要

讨论了几种封装高速(75-330 GHz) InP HEMT MMIC器件的方法。共面线键合在直流至110 GHz范围内的插入损耗小于0.5 dB,回波损耗优于-17 dB。提出了一种主板/子板封装方案,该方案使用共面线键合方法支持最小损耗链的mmic。分块波导封装方法在g波段(140-220 GHz)提出了两种类型的mmic波导转换:e平面探头和对跖鳍线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Packaging of microwave integrated circuits operating beyond 100 GHz
Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5 dB and return loss better than -17 dB, from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method.. Split-block waveguide packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe and antipodal finline.
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