窄InAs/AlSb量子阱的子带间跃迁

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146771

D. Larrabee, J. Tang, M. Liang, G. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, O. Suekane, S. Sasa, M. Inoue, K. Kolokolov, J. Li, C. Ning

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引用次数: 5

摘要

我们研究了InAs/AlSb多量子阱中的子带间跃迁(isbt)。在7 ~ 10 nm宽的井中，ISBT能量随井宽和温度的降低而增加。我们没有观察到这些井的光致发光(PL)。在2.4 ~ 6 nm宽的井中，我们观察到PL，但没有观察到isbt。我们用8波段kp理论计算了这些样品的能带结构，包括应变和多体效应。我们建立了ISBT能量对井宽和温度的依赖性模型。此外，我们还观察了QW界面类型和井中Si掺杂对isbt的影响。

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Intersubband transitions in narrow InAs/AlSb quantum wells

We have investigated intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells. In wells from 7 to 10 nm wide, the ISBT energy increases with decreasing well width and temperature. We do not observe photoluminescence (PL) from these wells. In wells from 2.4 to 6 nm wide, we observe PL but not ISBTs. We have calculated the band structure of these samples using an 8 band k.p theory including strain and many-body effects. We have modelled the dependence of the ISBT energy on well width and temperature. In addition, we have observed the effects on ISBTs of QW interface type and Si doping in the well.

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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