片上平面外高q电感器

K. Van Schuylenbergh, C. Chua, D. Fork, J. Lu, B. Griffiths
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引用次数: 12

摘要

在半导体电路中集成高q电感器多年来一直是一个难以实现的目标,主要是由于涡流损耗和与面内螺旋电感相关的趋肤效应电阻。三维面外线圈利用其几何形状和磁场方向减少了涡流和趋肤效应损失。然而,平面外线圈不被认为是可生产的标准半导体制造方法。本文报道了传统半导体加工技术在各种绝缘或有源半导体衬底上批量制造三维高q电感器的新应用。薄的钼铬薄膜被溅射沉积在工程设计的内置应力梯度上,这样,当它们从衬底上成形并释放时,它们就会卷曲成圆形弹簧。这些弹簧自组装成三维支架,在镀铜后形成高导电性绕组。在标准CMOS硅上,在1ghz下观察到的质量因子高达85。将BiCMOS硅L-C振荡器的在线微线圈性能与最先进的带槽接地的平面螺旋振荡器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-chip out-of-plane high-Q inductors
Integrating high-Q inductors on semiconductor circuits has been an elusive goal for years due primarily to the eddy current losses and skin effect resistance associated with in-plane spiral inductors. Three-dimensional out-of-plane coils reduce eddy current and skin effect losses by virtue of their geometry and magnetic field orientation. However, out-of-plane coils were not deemed producible by standard semiconductor fabrication methods. This paper reports on a novel use of conventional semiconductor processing techniques to batch-fabricate three-dimensional high-Q inductors on a wide range of insulating or active semiconductor substrates. Thin molybdenum-chromium films are sputter deposited with an engineered built-in stress gradient so that, when patterned and released from their substrate, they curl into circular springs. These springs self-assemble into three-dimensional scaffolds that form highly conductive windings after being copper plated. Quality factors up to 85 are observed at 1 GHz on standard CMOS silicon. The in-circuit microcoil performance is also compared in BiCMOS silicon L-C oscillators to that of state-of-the-art planar spirals with slotted grounds.
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