The heterogeneous integration of InAlAs/InGaAs heterojunction diodes on GaAs: impact of wafer bonding on structural and electrical characteristics

Proceedings. IEEE Lester Eastman Conference on High Performance Devices Pub Date : 2002-08-06 DOI:10.1109/LECHPD.2002.1146778

Tong‐Ho Kim, C. Yi, April S. Brown, P. Moran, T. Kuech

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Abstract

We have investigated the influence of low temperature wafer bonding on the electrical and structural characteristics of InAlAs/InGaAs n-p heterojunction structures with similar structure to an emitter-base junction of InAlAs/InGaAs HBTs. Those n-p junction heterostructures were grown on an InP [100] substrate by solid source MBE. The effect of the wafer bonding process on the structural properties of the epitaxial layers was studied by comparing triple crystal X-ray diffraction measurements and simulations before and after bonding. In addition, the influence of the bonding process on the electrical properties of the heterojunction structures was assessed through SIMS analysis of both the bonded and nonbonded samples and an analysis of the I-V characteristics of diodes fabricated on both the bonded and non-bonded sample. These analyses show that the structural and electrical properties of the as-grown epitaxial layers were negligibly changed by the low temperature wafer transfer process.

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InAlAs/InGaAs异质结二极管在GaAs上的异质集成:晶圆键合对结构和电学特性的影响

我们研究了低温晶片键合对与InAlAs/InGaAs HBTs发射基结结构相似的InAlAs/InGaAs n-p异质结结构的电学和结构特性的影响。这些n-p结异质结构通过固体源MBE在InP[100]衬底上生长。通过对比键合前后的三晶x射线衍射测量和模拟，研究了晶圆键合工艺对外延层结构性能的影响。此外，通过对键合和非键合样品的SIMS分析以及在键合和非键合样品上制备的二极管的I-V特性分析，评估了键合过程对异质结结构电学性能的影响。分析结果表明，低温晶圆转移过程对外延层的结构和电学性能影响很小。

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Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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