IEEE Journal of the Electron Devices Society最新文献_第3页

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping 采用复合沟道和双面掺杂技术的高输出功率和效率 300-GHz 频带 InP 型 MOS-HEMT 功率放大器

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-18 DOI: 10.1109/JEDS.2024.3483305

Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Yasuhiro Nakasha;Masaru Sato;Toshihiro Ohki

{"title":"High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping","authors":"Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Yasuhiro Nakasha;Masaru Sato;Toshihiro Ohki","doi":"10.1109/JEDS.2024.3483305","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3483305","url":null,"abstract":"This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistors (HEMTs) with composite-channel (CC) and double-side-doping (DD) techniques. The CC-DD structure obtained high output current and low channel resistance due to the improved carrier density and mobility. W-band load-pull measurement revealed the drastically improved output power density of CC-DD structure compared with that of singlechannel DD structure. The 2-stage cascaded, 4-way, and 16-way PA-MMICs were designed based on stacked common-gate transistors with current reuse topology. The cascaded PA-MMIC exhibited a poweradded efficiency (PAE) of 7.8%, and the 16-way PA-MMIC exhibited an output power of 16.9 dBm. These values are the highest among all the values reported for the 300-GHz band PA-MMICs. The 4-way PA-MMIC achieved a high output power of 13.6–14.6 dBm and high PAE of 4.8%–6.3% simultaneously at the entire 300-GHz band.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"965-973"},"PeriodicalIF":2.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10722855","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Capacitively Coupled Near-Threshold Biasing: Low-Power Design Based on Metal Oxide TFTs for IoT Applications 电容耦合近阈值偏置：基于金属氧化物 TFT 的物联网应用低功耗设计

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-14 DOI: 10.1109/JEDS.2024.3480269

Yixin Fu;Zhixuan Wang;Shuai Yuan;Shengdong Zhang;Yudi Zhao;Junchen Dong;Kai Zhao

{"title":"Capacitively Coupled Near-Threshold Biasing: Low-Power Design Based on Metal Oxide TFTs for IoT Applications","authors":"Yixin Fu;Zhixuan Wang;Shuai Yuan;Shengdong Zhang;Yudi Zhao;Junchen Dong;Kai Zhao","doi":"10.1109/JEDS.2024.3480269","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3480269","url":null,"abstract":"Metal Oxide Thin Film Transistors (MO TFTs) have garnered considerable interest in emerging Internet of Things (IoT) fields such as wearable electronics, displays, Radio Frequency Identification (RFID), and biomedical monitoring, owing to their flexibility and transparency. However, limitations in channel materials make MO TFT-based circuits unipolar. Unipolar circuits often exhibit elevated short-circuit power consumption, which restricts the development of MO TFTs in the IoT sector. This paper introduces a Capacitively Coupled Near-Threshold Biasing (CCNB) technique that leverages the unique Capacitance-Voltage (C-V) characteristics of MO TFTs to bias devices in the near-threshold region, achieving nearly a 95% reduction in power consumption compared to traditional designs with the device coupling ratio (channel capacitance/overlap capacitance) at 40. Furthermore, considering the significance of clock signals in IoT applications, we have also developed a low-power full-swing Ring Oscillator (RO) based on our CCNB technique, resulting in a 90% reduction in power consumption and a nearly 70% reduction in PDP compared to conventional low-power designs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"956-964"},"PeriodicalIF":2.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10716537","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology 基于空洞嵌入式绝缘体硅技术的全栅极 MOSFET 的次阈值扭结效应

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-11 DOI: 10.1109/JEDS.2024.3478750

Yuxin Liu;Qiang Liu;Jin Chen;Zhiqiang Mu;Xing Wei;Wenjie Yu

引用次数: 0

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs 基于表面电位的栅极全方位隧道场效应晶体管漏极电流模型

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-10 DOI: 10.1109/JEDS.2024.3477928

Zhanhang Chen;Haoliang Shan;Ziyi Ding;Xia Wu;Xiaolin Cen;Xiaoyu Ma;Wanling Deng;Junkai Huang

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Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells 石墨纳米颗粒作为杂化空穴传输层在非富勒烯有机太阳能电池中的应用

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-07 DOI: 10.1109/JEDS.2024.3475513

Magaly Ramírez-Como;Monica M. Valdez-Mata;Angel Sacramento;José L. Casas-Espínola;Luis Reséndiz;Lluis F. Marsal

{"title":"Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells","authors":"Magaly Ramírez-Como;Monica M. Valdez-Mata;Angel Sacramento;José L. Casas-Espínola;Luis Reséndiz;Lluis F. Marsal","doi":"10.1109/JEDS.2024.3475513","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3475513","url":null,"abstract":"This study investigates the impact of incorporating graphite nanoparticles (GNPs) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as hybrid hole transport layer (HTL) in non-fullerene organic solar cells (NF-OSCs) based on PBDB-T-2F:BTP-4CL. The concentration of GNPs in the PEDOT:PSS layer was varied to investigate their impact on the overall device behavior. The PCE initially increased with the GNPs concentration up to 5% v/v, reaching a maximum enhancement of 6.43%, which was attributed to the increased JSC. Current-voltage measurements and Mott-Schottky analysis through capacitance-voltage characteristics were conducted to evaluate the behavior of the charge recombination and built-in potential due to the concentration variation of the GNPs into PEDOT:PSS. This study illustrates the potential of GNPs to improve OSC performance through enhanced light absorption, reduced recombination losses, and improved charge carrier transport, indicating promising prospects for GNPs on interface layers in OSCs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1044-1050"},"PeriodicalIF":2.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706788","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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HEMT Noise Modeling for D Band Low Noise Amplifier Design 用于 D 波段低噪声放大器设计的 HEMT 噪声建模

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-07 DOI: 10.1109/JEDS.2024.3475289

Ao Zhang;Jianjun Gao

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A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation 考虑到有源层厚度变化影响的基于物理的 AOS TFT 紧凑型直流模型

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-04 DOI: 10.1109/JEDS.2024.3474291

Minxi Cai;Wei Zhong;Bei Liu;Piaorong Xu;Jing Cao

引用次数: 0

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning 利用机器学习预测随机电报噪声诱发的阈值电压偏移及其扩展依赖性

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-01 DOI: 10.1109/JEDS.2024.3471999

Eunseok Oh;Hyungcheol Shin

{"title":"Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning","authors":"Eunseok Oh;Hyungcheol Shin","doi":"10.1109/JEDS.2024.3471999","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3471999","url":null,"abstract":"Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced \u0000<inline-formula> <tex-math>${mathrm { V}}_{mathrm { t}}$ </tex-math></inline-formula>\u0000 shift in 3D NAND flash memory. Artificial neural network (ANN)-based machine learning (ML) is used for this prediction. With 2000 samples, ANN is trained and tested to predict the \u0000<inline-formula> <tex-math>${mathrm { V}}_{mathrm { t}}$ </tex-math></inline-formula>\u0000 shift of random cells with high reliability. Furthermore, ANN is applied to predict the tendency of RTN-induced \u0000<inline-formula> <tex-math>${mathrm { V}}_{mathrm { t}}$ </tex-math></inline-formula>\u0000 shift in scaled 3D NAND. Compared to prior works which has required far more measurements or simulations, the predictions are shown to shorten the time spent to obtain the distribution. Based on these predictions, the dependency of the decay constant on cell variation is investigated, which is a most critical parameter in analyzing the RTN distribution. This indicates that it is possible to apply ANN-based ML to predict various characteristics of 3D NAND flash memory in a much shorter time and to develop numerical models of related parameters.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"934-940"},"PeriodicalIF":2.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10702511","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors 纳米片场效应晶体管的工艺感知分析栅极电阻模型

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-30 DOI: 10.1109/JEDS.2024.3469917

Junha Suk;Yohan Kim;Jungho Do;Garoom Kim;Woojin Rim;Sanghoon Baek;Seiseung Yoon;Soyoung Kim

引用次数: 0

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs 基于能带结构的高效计算方法，用于准确确定UTB MOSFET 的静电和源极至漏极隧道电流

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-27 DOI: 10.1109/JEDS.2024.3469398

Nalin Vilochan Mishra;Aditya Sankar Medury

{"title":"Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs","authors":"Nalin Vilochan Mishra;Aditya Sankar Medury","doi":"10.1109/JEDS.2024.3469398","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3469398","url":null,"abstract":"The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson’s equation self consistently, determined by using the \u0000<inline-formula> <tex-math>$sp^{3}d^{5}s^{*}$ </tex-math></inline-formula>\u0000 semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"881-888"},"PeriodicalIF":2.0,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10697110","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0