Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-04-01 DOI:10.1109/JEDS.2025.3556408

Ce Wang;Hong Zhou;Sami Alghamdi;Chunxu Su;Zhihong Liu;Kui Dang;Xuefeng Zheng;Xiaohua Ma;Peijun Ma;Yue Hao;Jincheng Zhang

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引用次数: 0

Abstract

In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the

$\rm V_{on}$

of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low

$\rm V_{on}$

of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance

$\beta $

-Ga2O3 SBDs with high reverse blocking and low loss capabilities.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.