Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-04-01 DOI:10.1109/JEDS.2025.3556408

Ce Wang;Hong Zhou;Sami Alghamdi;Chunxu Su;Zhihong Liu;Kui Dang;Xuefeng Zheng;Xiaohua Ma;Peijun Ma;Yue Hao;Jincheng Zhang

{"title":"Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage","authors":"Ce Wang;Hong Zhou;Sami Alghamdi;Chunxu Su;Zhihong Liu;Kui Dang;Xuefeng Zheng;Xiaohua Ma;Peijun Ma;Yue Hao;Jincheng Zhang","doi":"10.1109/JEDS.2025.3556408","DOIUrl":null,"url":null,"abstract":"In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the <inline-formula> <tex-math>$\\rm V_{on}$ </tex-math></inline-formula> of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low <inline-formula> <tex-math>$\\rm V_{on}$ </tex-math></inline-formula> of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 SBDs with high reverse blocking and low loss capabilities.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"334-342"},"PeriodicalIF":2.0000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10945755","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10945755/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the

$\rm V_{on}$

of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low

$\rm V_{on}$

of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance

$\beta $

-Ga2O3 SBDs with high reverse blocking and low loss capabilities.

查看原文本刊更多论文

低功函数阳极高击穿电压β-Ga₂O₃异质结肖特基二极管的提出与仿真

在这项工作中，我们提出了一种具有低导通电压（Von）和高击穿电压（BV）的p-NiO/n-Ga2O3异质结（HJ）肖特基势垒二极管（SBD），并以沟槽SBD作为控制。利用Sentaurus TCAD对其电特性进行了仿真研究。HJ SBD利用低功函数的阳极金属，通过降低二极管在正向状态的V_{on}$来形成顶电极。采用翅片结构和金属/半导体（M/S）结或PN HJ来实现反向状态下的增强BV。本文还尝试通过改变器件的结构参数来优化器件的电气特性。HJ SBD同时实现了0.57 V的低电压和3.79 GW/cm2的功率优值（P-FOM）。该结构为实现具有高反向阻塞和低损耗性能的高性能$\beta $ -Ga2O3 sbd提供了新的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.