Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-29 DOI:10.1109/JEDS.2025.3575015

Yueh-Ju Chan;Min-Hui Chuang;Yiming Li

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引用次数: 0

Abstract

This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL)

$\mathrm {MoS_{2}}$

devices through density-functional-theory (DFT) calculation and device simulation. We begin by analyzing material properties and van der Waals gaps at metal contacts of

$\mathrm {MoS_{2}}$

using DFT calculation. These results are then used for device simulation, aligning closely with experimental data. For the first time, the model is extended to 3D gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs) simulation, enabling contact resistance

$(R_{C})$

estimation. This work addresses key challenges by reducing computational demands compared to non-equilibrium Green function method and accurately calibrating devices with various metal contacts and gate lengths. Simulations with C-type S/D contacts achieve an

$R_{C}$

$89.6~\Omega $

$\mu $

m in 7-channel GAA BL

$\mathrm {MoS_{2}}$

NS FETs, offering an interesting study for 2D material-based devices.

查看原文本刊更多论文

具有源/漏金属触点的ML型和BL型MoS2 GAA NS场效应管的电特性

本文通过密度泛函理论（DFT）计算和器件仿真，报道了单层和双层（BL） $\mathrm {MoS_{2}}$器件的源/漏（S/D）接触问题。我们首先使用DFT计算分析材料特性和$\mathrm {MoS_{2}}$金属接触处的范德华间隙。然后将这些结果用于设备模拟，与实验数据密切一致。该模型首次扩展到三维栅极全域（GAA）纳米片场效应晶体管（fet）仿真，实现了接触电阻$(R_{C})$估计。与非平衡格林函数方法相比，这项工作通过减少计算需求和精确校准具有各种金属触点和栅极长度的设备来解决关键挑战。在7通道GAA BL $\mathrm {MoS_{2}}$ NS fet中，c型S/D触点的模拟实现了$R_{C}$为$89.6~\Omega $ - $\mu $ m，为基于2D材料的器件提供了一个有趣的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.