>3kV NiO/Ga2O3 Heterojunction Diodes With Space-Modulated Junction Termination Extension and Sub-1V Turn-On

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-04-17 DOI:10.1109/JEDS.2025.3562028

Advait Gilankar;Abishek Katta;Nabasindhu Das;Nidhin Kurian Kalarickal

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引用次数: 0

Abstract

This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV with a low turn on voltage (VON) of 0.8V, estimated at a forward current density (IF) of 1

$A-cm^{\text {-2}}$

. The measured devices exhibit excellent turn-on characteristics achieving 100

$A-cm^{\text {-2}}$

current density at a forward bias of 1.5V along with a low differential specific on-resistance (Ron,sp) of 4.4 m

$\Omega $

-cm2. The SM-JTE was realized using concentric NiO rings with varying widths and spacing that approximates a gradual reduction in JTE charge. The unipolar figure of merit (FOM) calculated exceeds 2 GW-cm2 and is among the best reported for devices with a sub-1V turn-on. The fabricated devices also displayed minimal change in forward I-V characteristics post reverse bias stress of 3 kV applied during breakdown voltage testing.

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>3kV NiO/Ga2O3异质结二极管，具有空间调制结端延伸和亚1v导通

这项工作展示了高性能的垂直NiO/Ga2O3异质结二极管（HJDs），具有两步空间调制结终端扩展。与目前最先进的Ga2O3 HJDs不同，我们以0.8V的低导通电压（VON）实现了超过3kv的击穿电压，估计正向电流密度（IF）为1 $ a -cm^{\text{-2}}$。所测器件具有优异的导通特性，在正向偏置1.5V下实现100 $ a -cm^{\text{-2}}$电流密度，并具有4.4 m $\Omega $ -cm2的低差分比导通电阻（Ron,sp）。SM-JTE采用不同宽度和间距的同心NiO环来实现，近似于逐渐减少JTE电荷。计算出的单极性能值（FOM）超过2 GW-cm2，是具有sub-1V导通的器件的最佳报告之一。在击穿电压测试中施加3kv反向偏置应力后，制备的器件也显示出最小的正向I-V特性变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.