Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-31 DOI:10.1109/JEDS.2025.3552036

Pragya R. Shrestha;Alexander Zaslavsky;Valery Ortiz Jimenez;Jason P. Campbell;Curt A. Richter

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引用次数: 0

Abstract

This paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (

$10{^{{7}}}~I_{1}$

$I_{0}$

sense current ratio) and prolonged retention. The memory is enabled by the bistable

$I_{D}$

–

$V_{G}$

transistor characteristics due to impact ionization (II) at cryogenic temperatures (T < 30 K). Focusing on critical memory reliability parameters—switching time, endurance, and retention characteristics—we present write/erase speeds down to

$\approx ~45$

ns at T < 10 K and cycling endurance surpassing

$10^{9}$

cycles while maintaining the

$I_{1}$

$I_{0}$

memory window. Retention times of >10 s with a 30x memory window were observed in extensive high-speed measurements. The fast switching and retention characteristics combine to yield a low power (

$\mu $

W-range) candidate for local cache memory to support quantum sensing or quantum computing control circuitry. Additionally, our study outlines essential measurements crucial for exploring the viability of alternative memory solutions for low-temperature quantum sensing and computation applications.

查看原文本刊更多论文

本文介绍了一种采用 180 nm 体 CMOS 技术制造的高端无电容单晶体管 (1T) 低温存储器，它具有 ( $10{^{{7}}~I_{1}$ / $I_{0}$ 感应电流比) 的高存储窗口和较长的保持时间。在低温（T < 30 K）条件下，冲击电离（II）导致的双稳态 $I_{D}$ - $V_{G}$ 晶体管特性使这种存储器成为可能。我们重点关注关键的存储器可靠性参数--切换时间、耐久性和保持特性--在 T < 10 K 时，写入/擦除速度可低至 $/approx ~45$ ns，循环耐久性超过 $10^{9}$ 周期，同时保持 $I_{1}$ / $I_{0}$ 存储窗口。在大量高速测量中观察到的保持时间大于 10 秒，存储窗口为 30 倍。快速开关和保持特性相结合，产生了一种低功耗（$\mu $ W-range）本地高速缓冲存储器候选方案，以支持量子传感或量子计算控制电路。此外，我们的研究还概述了对探索低温量子传感和计算应用的替代存储器解决方案的可行性至关重要的基本测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.