1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)最新文献_第3页

A successful application of WLR fast test on Al via process optimisation 通过过程优化，成功地将WLR快速测试应用于人工智能

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830562

X. Liu, K. Lo, Q. Guo, J. Cai

引用次数: 3

(Ultra)thin oxide breakdown(s), an overview (超)薄氧化物分解(s)，概述

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830587

E. Vincent

引用次数: 4

Reliability test results for W FIB interconnect structures wfib互连结构可靠性试验结果

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830553

M. Zaragoza, Jingwei Zhang, M. Abramo

引用次数: 0

Signal margin test to identify process sensitivities relevant to DRAM reliability and functionality at low temperatures 信号裕度测试，以确定在低温下与DRAM可靠性和功能相关的工艺灵敏度

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830551

E. Nelson, Y. Li, D. Poindexter, M. Ruprecht, E. Lim, Y. Matsubara, H. Sawazaki, Q. Ye, M. Iwatake, W. Tonti

引用次数: 2

Detecting breakdown in ultra-thin dielectrics using a fast voltage ramp 使用快速电压坡道检测超薄电介质的击穿

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830571

E. Snyder, J. Suehle

{"title":"Detecting breakdown in ultra-thin dielectrics using a fast voltage ramp","authors":"E. Snyder, J. Suehle","doi":"10.1109/IRWS.1999.830571","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830571","url":null,"abstract":"We propose a voltage ramp technique which detects ultra-thin oxide breakdown when other techniques (such as noise) fail. This technique provides a straightforward method of extending conventional ramp breakdown techniques to ultra-thin dielectrics (<3.5 nm). This technique monitors the use-condition current (or current below stress current) after each stress-step in the ramp. We apply this method to a wide range of oxide areas and gate oxide thicknesses. We show for the first time that the post-stress leakage current is independent of oxide area over 7 orders of magnitude and for 5 oxide thickness from 20 nm to 2.3 nm. In addition, we show that the voltage ramp Weibull distribution statistics scale with area and are consistent with constant voltage stress tests on 2 nm gate oxides. We model the post-breakdown I-V characteristics and show a space-charge limited behavior. This observation is used to explain why a modified voltage ramp technique is needed for ultra-thin oxides and defect-detecting large area structures. Finally, we demonstrate that new noise techniques may be necessary to detect breakdown during constant voltage stress in ultra-thin gate oxides.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114127106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations 利用半导体能量平衡方程和氧化物载流子输运方程的自一致解模拟热载流子退化

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830565

S. Mukundan, M. Pagey, peixiong zhao, K. Galloway

引用次数: 0

Hot-carrier damage in AC-stressed deep submicrometer CMOS technologies 交流应力深亚微米CMOS技术中的热载流子损伤

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830559

A. Bravaix, D. Goguenheim, N. Revil, Emmanuel Vincent

引用次数: 12

Impact of Si/N ratios in a pre-metal Si/sub x/N/sub y/:H/sub z/ dielectric film on NMOS channel hot carrier reliability 预金属Si/sub x/N/sub y/:H/sub z/介质膜中Si/N比对NMOS通道热载流子可靠性的影响

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830585

J. Masin, R. Mena, M. Brugler, B. Rajagopalan

引用次数: 1

Conduction mechanisms in Cu/low-k interconnect 铜/低钾互连中的传导机制

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830561

G. Bersuker, V. Blaschke, S. Choi, D. Wick

引用次数: 0

Dependence of HCI mechanism on temperature for 0.18 /spl mu/m technology and beyond 0.18 /spl mu/m及以上工艺的HCI机制对温度的依赖性

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830560

Weizhong Wang, J. Tao, P. Fang

引用次数: 3