利用半导体能量平衡方程和氧化物载流子输运方程的自一致解模拟热载流子退化

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830565

S. Mukundan, M. Pagey, peixiong zhao, K. Galloway

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引用次数: 0

摘要

Si-SiO/sub - 2/界面被建模为一个突发性异质结，以模拟n沟道和p沟道mosfet的氧化物中的热载子注入和输运。将硅中的能量平衡方程、氧化区和硅区的连续性方程与氧化物中的俘获速率方程统一求解，模拟热载流子诱导的载流子俘获和界面俘获的产生。

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Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations

The Si-SiO/sub 2/ interface has been modelled as an abrupt heterojunction to simulate hot-carrier injection and transport in oxides of n- and p-channel MOSFETs. Energy balance equations in silicon and continuity equations in the oxide and silicon regions are solved consistently with trapping-rate equations in the oxide to simulate hot-carrier induced carrier trapping and interface trap generation.

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1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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