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Modeling of polycrystalline silicon thermal coefficient of resistance 多晶硅热阻系数的建模
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830583
S. Kumar, L. Bouknight
{"title":"Modeling of polycrystalline silicon thermal coefficient of resistance","authors":"S. Kumar, L. Bouknight","doi":"10.1109/IRWS.1999.830583","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830583","url":null,"abstract":"Polycrystalline silicon is used everywhere in silicon semiconductor industry as resistor because of it's ease of formation, ease of creating different types of resistors by varying doping and also because polysilicon is used for gates, capacitor plates etc. in the circuits. Quite often the device has to work at high temperatures. Change in temperature changes the resistance of the polysilicon drastically, which in turn changes the power dissipation through resistors. It is extremely important to predict the thermal behavior of the resistor for a better reliability prediction. Currently no good models are available to predict the thermal behavior of the polysilicon resistor. This paper presents a model for the Thermal Coefficient of Resistance (TCR) of polycrystalline silicon. In the first part of this paper, a model has been presented. A case study is presented next.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123930344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Predicting thermal behavior of interconnects 预测互连的热行为
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830558
J. Gill, D. Harmon, J. Furukawa, T. Sullivan
{"title":"Predicting thermal behavior of interconnects","authors":"J. Gill, D. Harmon, J. Furukawa, T. Sullivan","doi":"10.1109/IRWS.1999.830558","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830558","url":null,"abstract":"Previous investigations into thermal characteristics of embedded interconnects produced a wafer level technique for measurement of the thermal conductance, as well as a quasi-analytical model for predicting the results (Harmon, Gill and Sullivan, IRW 1998). In this paper, measurements of the thermal characteristics of embedded interconnects with underlying insulator thicknesses from 1.0 to 0.1 /spl mu/m are presented. These measurements indicate the thermal conductance for thin insulators is significantly less than that predicted by the quasi-analytical model. Through finite element modeling, this discrepancy is shown to be due to localized substrate heating. An \"effective conductivity\" method is presented to extend the quasi-analytical model to include substrate-heating effects. This same approach is proposed for analysis of composite insulator structures including low K dielectrics. The methodology is assessed by comparing modeled and measured fuse current densities for embedded interconnects of varying width and underlying insulator thickness.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134126016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Gate oxide improvement: statistics and methodology 栅极氧化物改进:统计和方法
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830578
Peter Baumgartner, M. Hammer, R. Heinrich, R. Berger, G. Poppel
{"title":"Gate oxide improvement: statistics and methodology","authors":"Peter Baumgartner, M. Hammer, R. Heinrich, R. Berger, G. Poppel","doi":"10.1109/IRWS.1999.830578","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830578","url":null,"abstract":"Optimizing the gate oxide quality of logic processes is a difficult and important task: due to the missing redundancy, a large variety of hard to analyze products (small burn in statistics), and increasing product requirements (large gate oxide area, high electric field). This contribution describes statistical considerations and a methodology applied to monitor and improve the gate oxide quality of logic processes. A variety of test structures, which are sensitive to the influence of different process blocks, are used to identify possible gate oxide quality hazards. This work clearly indicates the necessity to examine a variety of test structures with large GOX areas, to separate the influence of different processing steps and substrate materials. A continuous GOX-monitoring and improvement is an important tool to ensure increased oxide reliability and to fulfill the continuously increasing product requirements.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131773908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New experimental findings on SILC and SBD of ultra-thin gate oxides 超薄栅极氧化物SILC和SBD的新实验发现
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830570
M.G. Chen, C.H. Liu, M. Lee, K. Fu
{"title":"New experimental findings on SILC and SBD of ultra-thin gate oxides","authors":"M.G. Chen, C.H. Liu, M. Lee, K. Fu","doi":"10.1109/IRWS.1999.830570","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830570","url":null,"abstract":"It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR WLR Jramp试验与高场恒压应力试验的敏感性及相关性研究
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830568
Yuan Chen, Feng Li, P. Mason, Yi Ma, A. Oates
{"title":"The sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR","authors":"Yuan Chen, Feng Li, P. Mason, Yi Ma, A. Oates","doi":"10.1109/IRWS.1999.830568","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830568","url":null,"abstract":"Jramp test and high-field constant voltage stress test are evaluated for both quick reliability assessment and in-line production monitoring. Although the conducting mechanism for both tests are at the Fowler-Nordheim tunneling regime, high-field constant voltage stress test is found to be a more sensitive test than Jramp for in-line production monitor. This can be explained by the nature of Jramp itself based on analysis using accumulative law. By using the dual V-t model to extract reliability information, this paper shows that Jramp can be also used to compare the absolute oxide reliability for different technologies.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125933432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
WLR monitoring stresses and suitable test structures for future product reliability targets WLR监测应力和适合未来产品可靠性目标的测试结构
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830572
A. Martin, M. Kerber, G. Diestel
{"title":"WLR monitoring stresses and suitable test structures for future product reliability targets","authors":"A. Martin, M. Kerber, G. Diestel","doi":"10.1109/IRWS.1999.830572","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830572","url":null,"abstract":"The demands on gate oxide qualification and monitoring and their limits are discussed in detail. Methods are presented to demonstrate the customers reliability requirements through a combination of experiments and extrapolation. The motivation for this work was the visualisation of the discrepancy between today's qualification and monitoring possibilities and tomorrow's customers targets. Realistically, the effort to demonstrate the reliability targets experimentally is limited and will be too high for future reliability targets. The paper consists of two main parts, a discussion of an approach to assess today's stringent failure rate targets through reliability measurements and the extrapolation of Weibull distributions. Steps towards building-in-reliability (BIR) are mentioned in this paper, when appropriate, but are not further discussed.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129523650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides MOS栅氧化物击穿电压分布与外源TDDB失效
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830564
H. Katto
{"title":"Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides","authors":"H. Katto","doi":"10.1109/IRWS.1999.830564","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830564","url":null,"abstract":"An oxide reliability analysis algorithm is used to predict extrinsic TDDB failures based on known intrinsic acceleration parameters. Adopting an effective oxide thickness model, the theory relates the oxide defects with breakdown voltage, V/sub BD/, and the long-term oxide reliability of large area devices. The extrinsic TDDB data by Boyko and Gerlach (1989) is analyzed and the small time dependence of extrinsic failures is successfully predicted. It is newly demonstrated that the extrinsic temperature and field acceleration parameters (Ea and /spl gamma/) are effectively different from those of intrinsic failures.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130835135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New experimental findings on constant voltage and current soft-breakdown in ultra-thin oxides 超薄氧化物恒压恒流软击穿实验新发现
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830567
D. Brisbin, P. Chaparala
{"title":"New experimental findings on constant voltage and current soft-breakdown in ultra-thin oxides","authors":"D. Brisbin, P. Chaparala","doi":"10.1109/IRWS.1999.830567","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830567","url":null,"abstract":"This paper compares constant current stress (CCS) and constant voltage stress (CVS) soft breakdown (SBD) measurement results in ultra-thin oxides (3.5 nm and 2.5 nm) and finds that a number of important correlation issues arise. The discrepancies between CCS and CVS SBD include the following: SBD event percentage is greater in CCS than CVS; CCS SBD region extends to higher stress currents; post-SBD noise is much greater in CCS than CVS. To understand these discrepancies the effect of available source power on CCS and CVS SBD is examined. In both 3.5 nm and 2.5 nm oxides it is found that the available source power has significant impact on SBD results.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126636239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot-carrier degradation evolution in deep submicrometer CMOS technologies 深亚微米CMOS技术中的热载流子降解演化
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830589
A. Bravaix
{"title":"Hot-carrier degradation evolution in deep submicrometer CMOS technologies","authors":"A. Bravaix","doi":"10.1109/IRWS.1999.830589","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830589","url":null,"abstract":"The different degradation mechanisms encountered in N- and P-MOSFET's are reviewed focusing on the main processing modifications carried out in recent CMOS technologies. With the supply voltage lowering and gate-oxide thinning, a significant reduction in the amount of Hot-Carrier generation is expected while the increasing effects of charge detrapping and tunneling mechanisms will modify the reliability criterion. This will first be examined measuring the Hot-Carrier generation rate in the last CMOS technologies. Following that goal, DC and AC experiments performed in inverter- and pass transistor-configurations are studied in order to determine to what extent the effects and mechanisms are affecting the resultant degradation behavior in both device types. Based on these results, a brief outlook ends this presentation about the evolution of the Hot-Carrier problem for the next generation.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126752082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Wafer level reliability (WLR) special interest group (SIG) 晶圆级可靠性(WLR)特别兴趣小组(SIG)
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830586
A. Martin
{"title":"Wafer level reliability (WLR) special interest group (SIG)","authors":"A. Martin","doi":"10.1109/IRWS.1999.830586","DOIUrl":"https://doi.org/10.1109/IRWS.1999.830586","url":null,"abstract":"This year B vcry enthusiastic group of fificen people met to discuss WLKrncasurement methods, In a first step the WLR issues o f interest wcre collccted from the participants and the following list was compiled: Methods ofmonitoring. -How many companies use WLR? Evaluation/analysis of inensureincnt results. Correlation of long & short tcrm W l,R measurement results. Differences bctween parametric testing and WLR testing. ~ Important WI,R strcssmelhods: + EM, isothcimal test, CN; $. 'I'DDB, SII,C, thin oxides; +mobile ions; + non-volatile memorics; -II-IC; + low temperature testing; +plasma induccd damago. -Docs W1.R monitoring work? -What is the ob.jectivc/puipose of WLR monitoring; + qualification, -ttransfw, f development? Failurc criteria, scrap limits for WLK? I Who wants WLR monitoring? Can be ;a minimum time limit defined for WLR tests to get Activation of corrcct failure mechanisms. W1,R monitoring: a relative meaSurc or lifetime extrapolation? -Correlation between changes in the process & WLR monitoring rncmingful rcsults?","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"31 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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