预测互连的热行为

J. Gill, D. Harmon, J. Furukawa, T. Sullivan
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引用次数: 11

摘要

先前对嵌入式互连热特性的研究产生了用于测量热导率的晶圆级技术,以及用于预测结果的准解析模型(Harmon, Gill和Sullivan, IRW 1998)。本文介绍了下绝缘体厚度从1.0到0.1 /spl mu/m的嵌入式互连的热特性测量。这些测量结果表明,薄绝缘体的导热系数明显小于准解析模型预测的导热系数。通过有限元建模,这种差异是由于局部衬底加热造成的。提出了一种“有效电导率”方法来扩展准解析模型,使其包括基材加热效应。本文提出了同样的方法来分析含低K介电体的复合绝缘子结构。通过比较不同宽度和绝缘子厚度的嵌入式互连的模型和测量的熔断器电流密度来评估该方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predicting thermal behavior of interconnects
Previous investigations into thermal characteristics of embedded interconnects produced a wafer level technique for measurement of the thermal conductance, as well as a quasi-analytical model for predicting the results (Harmon, Gill and Sullivan, IRW 1998). In this paper, measurements of the thermal characteristics of embedded interconnects with underlying insulator thicknesses from 1.0 to 0.1 /spl mu/m are presented. These measurements indicate the thermal conductance for thin insulators is significantly less than that predicted by the quasi-analytical model. Through finite element modeling, this discrepancy is shown to be due to localized substrate heating. An "effective conductivity" method is presented to extend the quasi-analytical model to include substrate-heating effects. This same approach is proposed for analysis of composite insulator structures including low K dielectrics. The methodology is assessed by comparing modeled and measured fuse current densities for embedded interconnects of varying width and underlying insulator thickness.
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