Modeling of polycrystalline silicon thermal coefficient of resistance

Abstract

Polycrystalline silicon is used everywhere in silicon semiconductor industry as resistor because of it's ease of formation, ease of creating different types of resistors by varying doping and also because polysilicon is used for gates, capacitor plates etc. in the circuits. Quite often the device has to work at high temperatures. Change in temperature changes the resistance of the polysilicon drastically, which in turn changes the power dissipation through resistors. It is extremely important to predict the thermal behavior of the resistor for a better reliability prediction. Currently no good models are available to predict the thermal behavior of the polysilicon resistor. This paper presents a model for the Thermal Coefficient of Resistance (TCR) of polycrystalline silicon. In the first part of this paper, a model has been presented. A case study is presented next.